Preparation and electric properties of SrBi2Ta2O9thin films by MOD method

Zhigang Zhang; Feng Yan; Jinsong Zhu; Chunhua Song; Xiaobin Chen; Yening Wang

doi:10.1016/S0040-6090(00)01243-8

Preparation and electric properties of SrBi₂Ta₂O₉thin films by MOD method

Zhigang Zhang, Feng Yan, Jinsong Zhu, Chunhua Song, Xiaobin Chen, Yening Wang

Research output: Journal article publication › Journal article › Academic research › peer-review

6 Citations (Scopus)

Abstract

Polycrystalline SrBi2Ta2O9(SBT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition (MOD) technique. The dielectric properties of SrBi2Ta2O9(SBT) capacitors were measured with HP4194 and RT6000HVS testers. The experimental results exhibited that the dielectric constant εr(f) and ac conductivity σ(f) of SBT thin films had a power law dependence on frequency. An increase in the ac conductivity with increasing frequency showed the relaxation of the leakage current of the SBT capacitors in the first stage. The dielectric constant and ac conductivity were dependent on the thickness, temperature, grain size, and annealing ambient, etc. of the SBT thin films.

Original language	English
Pages (from-to)	176-179
Number of pages	4
Journal	Thin Solid Films
Volume	375
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01243-8
Publication status	Published - 31 Oct 2000
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)01243-8

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@article{de09824099e142bcb4977994343639e7,

title = "Preparation and electric properties of SrBi2Ta2O9thin films by MOD method",

abstract = "Polycrystalline SrBi2Ta2O9(SBT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition (MOD) technique. The dielectric properties of SrBi2Ta2O9(SBT) capacitors were measured with HP4194 and RT6000HVS testers. The experimental results exhibited that the dielectric constant εr(f) and ac conductivity σ(f) of SBT thin films had a power law dependence on frequency. An increase in the ac conductivity with increasing frequency showed the relaxation of the leakage current of the SBT capacitors in the first stage. The dielectric constant and ac conductivity were dependent on the thickness, temperature, grain size, and annealing ambient, etc. of the SBT thin films.",

author = "Zhigang Zhang and Feng Yan and Jinsong Zhu and Chunhua Song and Xiaobin Chen and Yening Wang",

year = "2000",

month = oct,

day = "31",

doi = "10.1016/S0040-6090(00)01243-8",

language = "English",

volume = "375",

pages = "176--179",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Preparation and electric properties of SrBi2Ta2O9thin films by MOD method

AU - Zhang, Zhigang

AU - Yan, Feng

AU - Zhu, Jinsong

AU - Song, Chunhua

AU - Chen, Xiaobin

AU - Wang, Yening

PY - 2000/10/31

Y1 - 2000/10/31

N2 - Polycrystalline SrBi2Ta2O9(SBT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition (MOD) technique. The dielectric properties of SrBi2Ta2O9(SBT) capacitors were measured with HP4194 and RT6000HVS testers. The experimental results exhibited that the dielectric constant εr(f) and ac conductivity σ(f) of SBT thin films had a power law dependence on frequency. An increase in the ac conductivity with increasing frequency showed the relaxation of the leakage current of the SBT capacitors in the first stage. The dielectric constant and ac conductivity were dependent on the thickness, temperature, grain size, and annealing ambient, etc. of the SBT thin films.

AB - Polycrystalline SrBi2Ta2O9(SBT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition (MOD) technique. The dielectric properties of SrBi2Ta2O9(SBT) capacitors were measured with HP4194 and RT6000HVS testers. The experimental results exhibited that the dielectric constant εr(f) and ac conductivity σ(f) of SBT thin films had a power law dependence on frequency. An increase in the ac conductivity with increasing frequency showed the relaxation of the leakage current of the SBT capacitors in the first stage. The dielectric constant and ac conductivity were dependent on the thickness, temperature, grain size, and annealing ambient, etc. of the SBT thin films.

UR - http://www.scopus.com/inward/record.url?scp=0342538889&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(00)01243-8

DO - 10.1016/S0040-6090(00)01243-8

M3 - Journal article

SN - 0040-6090

VL - 375

SP - 176

EP - 179

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Preparation and electric properties of SrBi₂Ta₂O₉thin films by MOD method

Abstract

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