Abstract
Polycrystalline SrBi2Ta2O9(SBT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition (MOD) technique. The dielectric properties of SrBi2Ta2O9(SBT) capacitors were measured with HP4194 and RT6000HVS testers. The experimental results exhibited that the dielectric constant εr(f) and ac conductivity σ(f) of SBT thin films had a power law dependence on frequency. An increase in the ac conductivity with increasing frequency showed the relaxation of the leakage current of the SBT capacitors in the first stage. The dielectric constant and ac conductivity were dependent on the thickness, temperature, grain size, and annealing ambient, etc. of the SBT thin films.
Original language | English |
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Pages (from-to) | 176-179 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 375 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 31 Oct 2000 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry