Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

Z. B. Chen; W. Lei; B. Chen; Y. B. Wang; X. Z. Liao; H. H. Tan; J. Zou; S. P. Ringer; C. Jagadish

doi:10.1016/j.scriptamat.2013.07.020

Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

Z. B. Chen
, W. Lei
, B. Chen
, Y. B. Wang
, X. Z. Liao (Corresponding Author)
, H. H. Tan
, J. Zou
, S. P. Ringer
, C. Jagadish

Research output: Journal article publication › Journal article › Academic research › peer-review

4 Citations (Scopus)

Abstract

A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.

Original language	English
Pages (from-to)	638-641
Number of pages	4
Journal	Scripta Materialia
Volume	69
Issue number	8
DOIs	https://doi.org/10.1016/j.scriptamat.2013.07.020
Publication status	Published - Oct 2013
Externally published	Yes

Keywords

Chemical vapour deposition
Crystalline defects
Droplet epitaxy
Electron microscopy
Quantum dots

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

More information

10.1016/j.scriptamat.2013.07.020

Cite this

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title = "Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy",

abstract = "A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.",

keywords = "Chemical vapour deposition, Crystalline defects, Droplet epitaxy, Electron microscopy, Quantum dots",

author = "Chen, \{Z. B.\} and W. Lei and B. Chen and Wang, \{Y. B.\} and Liao, \{X. Z.\} and Tan, \{H. H.\} and J. Zou and Ringer, \{S. P.\} and C. Jagadish",

note = "Funding Information: The authors are grateful for the scientific and technical support from the Australian Microscopy and Microanalysis Research Facility node at the University of Sydney. We thank the Australian National Fabrication Facility for providing access to growth facilities used in this work. Mr. Yang Cao is acknowledged for helping the SEM experiment. This research was financially supported by the Australian Research Council.",

year = "2013",

month = oct,

doi = "10.1016/j.scriptamat.2013.07.020",

language = "English",

volume = "69",

pages = "638--641",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "8",

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TY - JOUR

T1 - Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

AU - Chen, Z. B.

AU - Lei, W.

AU - Chen, B.

AU - Wang, Y. B.

AU - Liao, X. Z.

AU - Tan, H. H.

AU - Zou, J.

AU - Ringer, S. P.

AU - Jagadish, C.

N1 - Funding Information: The authors are grateful for the scientific and technical support from the Australian Microscopy and Microanalysis Research Facility node at the University of Sydney. We thank the Australian National Fabrication Facility for providing access to growth facilities used in this work. Mr. Yang Cao is acknowledged for helping the SEM experiment. This research was financially supported by the Australian Research Council.

PY - 2013/10

Y1 - 2013/10

N2 - A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.

AB - A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.

KW - Chemical vapour deposition

KW - Crystalline defects

KW - Droplet epitaxy

KW - Electron microscopy

KW - Quantum dots

UR - https://www.scopus.com/pages/publications/84883051786

U2 - 10.1016/j.scriptamat.2013.07.020

DO - 10.1016/j.scriptamat.2013.07.020

M3 - Journal article

AN - SCOPUS:84883051786

SN - 1359-6462

VL - 69

SP - 638

EP - 641

JO - Scripta Materialia

JF - Scripta Materialia

IS - 8

ER -

Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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