Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

Z. B. Chen, W. Lei, B. Chen, Y. B. Wang, X. Z. Liao (Corresponding Author), H. H. Tan, J. Zou, S. P. Ringer, C. Jagadish

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)


A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.

Original languageEnglish
Pages (from-to)638-641
Number of pages4
JournalScripta Materialia
Issue number8
Publication statusPublished - Oct 2013
Externally publishedYes


  • Chemical vapour deposition
  • Crystalline defects
  • Droplet epitaxy
  • Electron microscopy
  • Quantum dots

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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