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Power Cycling Testing for Power Semiconductor Switches: Methods, Standards, Limitations, and Outlooks

  • Yi Zhang
  • , Patrick Heimler
  • , James Opondo Abuogo
  • , Xinyue Zhang
  • , Yichi Zhang
  • , Dong Xie
  • , Yuhao Zhang
  • , Kaichen Zhang
  • , Xiang Li
  • , Haoze Luo
  • , Ralf Schmidt
  • , Frede Blaabjerg
  • , Huai Wang
  • , Thomas Basler

Research output: Journal article publicationReview articleAcademic researchpeer-review

Abstract

Reliability is a critical performance metric for power semiconductor switches and power electronic systems. Yet guidance on how to test and quantify that reliability is fragmented in the existing literature, particularly with the rapid adoption of wide-bandgap (WBG) devices and novel packaging technologies. This review brings guidance on what designers, reliability engineers, and researchers need to know about power cycling testing (PCT). We provide three major contents: first, introducing how new materials and packaging shift dominant failure mechanisms; second, comparing the main PCT standards joint electron device engineering council (JEDEC), automotive electronics council (AEC), international electrotechnical commission (IEC), and automotive qualification guideline (AQG) and explaining why the “test-to-fail” standard principle is overtaking legacy “test-to-pass” rules; and third, summarizing the unique challenges and existing solutions of applying PCT methods to WBG and ultra-WBG devices. Notably, to the best of the authors’ knowledge, this is the first in-depth analysis of the newly released IEC 60749-34:2025 and AQG 324:2025, benchmarked against their earlier editions. Moreover, by collecting more than 200 testing samples from the existing literature, we also offer the first generic lifetime model that spans Si, SiC, multiple bond-wire materials, and die-attach technologies. Finally, the limitations and associated open questions are discussed to identify future research opportunities.

Original languageEnglish
Article number11108707
Pages (from-to)849-869
Number of pages21
JournalIEEE Transactions on Power Electronics
Volume41
Issue number1
DOIs
Publication statusPublished - Jan 2026

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy
  2. SDG 9 - Industry, Innovation, and Infrastructure
    SDG 9 Industry, Innovation, and Infrastructure

Keywords

  • Failure mechanisms
  • gallium nitride
  • lifetime models
  • power cycling
  • reliability
  • silicon
  • silicon carbide
  • standards

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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