Polycrystalline ZnO thin films on Si (1 0 0) deposited by filtered cathodic vacuum arc

X. L. Xu, Shu Ping Lau, J. S. Chen, G. Y. Chen, B. K. Tay

Research output: Journal article publicationJournal articleAcademic researchpeer-review

211 Citations (Scopus)

Abstract

Polycrystalline ZnO thin films have been grown on Si (1 0 0) substrate using filtered cathodic vacuum arc technique. Room temperature photoluminescence reveals a strong near-band edge emission at 378 nm and a weak green emission at around 510 nm from the ZnO film deposited at 230 °C. The intensity ratio of the near-band edge emission to green emission is about 100 indicating the high quality of the film. An additional emission at 420 nm, corresponding to the interstitial oxygen level, is also observed from the film grown at 430 °C. The ZnO thin films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, as well as transmittance measurement.
Original languageEnglish
Pages (from-to)201-205
Number of pages5
JournalJournal of Crystal Growth
Volume223
Issue number1-2
DOIs
Publication statusPublished - 1 Jan 2001
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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