Polycrystalline ZnO thin films have been grown on Si (1 0 0) substrate using filtered cathodic vacuum arc technique. Room temperature photoluminescence reveals a strong near-band edge emission at 378 nm and a weak green emission at around 510 nm from the ZnO film deposited at 230 °C. The intensity ratio of the near-band edge emission to green emission is about 100 indicating the high quality of the film. An additional emission at 420 nm, corresponding to the interstitial oxygen level, is also observed from the film grown at 430 °C. The ZnO thin films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, as well as transmittance measurement.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1 Jan 2001|
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry