Polycrystalline silicon ISFETs on glass substrate

Feng Yan, Pedro Estrela, Yang Mo, Piero Migliorato, Hiroshi Maeda

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)

Abstract

The Ion Sensitive Field Effect Transistor (ISFET) operation based on polycrystalline silicon thin film transistors is reported. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with PE-CVD Si3N4deposited on top of a conductor, which also provides the electrical connection to the remote TFT gate. Nearly ideal pH sensitivity (54 mV/pH) and stable operation have been achieved. Temperature effects have also been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The shift increases almost linearly upon the increase of penicillin concentration until saturation is reached for ∼ 7 mM. Poly-Si TFT structures with a gold sensing area have been also successfully applied to field-effect detection of DNA.
Original languageEnglish
Pages (from-to)293-301
Number of pages9
JournalSensors
Volume5
Issue number4-5
Publication statusPublished - 1 Apr 2005
Externally publishedYes

Keywords

  • DNA
  • Ion Sensitive Field Effect Transistor
  • Penicillin
  • pH sensor
  • Polycrystalline silicon thin film transistor
  • Silicon nitride

ASJC Scopus subject areas

  • Analytical Chemistry
  • Atomic and Molecular Physics, and Optics
  • Biochemistry
  • Instrumentation
  • Electrical and Electronic Engineering

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