Polycrystalline silicon ion sensitive field effect transistors

Feng Yan, P. Estrela, Y. Mo, P. Migliorato, H. Maeda, S. Inoue, T. Shimoda

Research output: Journal article publicationJournal articleAcademic researchpeer-review

40 Citations (Scopus)

Abstract

We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4sensing layer. Nearly ideal pH sensitivity (54 mV/pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10 mV/mM, in solutions with concentration lower than the saturation value, which is about 7 mM.
Original languageEnglish
Article number053901
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number5
DOIs
Publication statusPublished - 31 Jan 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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