Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator

Yin Xu; Feng Li; Jinhui Yuan; Zhe Kang; Dongmei Huang; Xianting Zhang; P. K.A. Wai

Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator

Yin Xu, Feng Li, Jinhui Yuan, Zhe Kang, Dongmei Huang, Xianting Zhang, P. K.A. Wai

The Hong Kong Polytechnic University

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

We propose a highly-efficient, low-loss, and polarization insensitive silicon-indium tin oxide electro-absorption modulator. High modulation efficiency of 3.18 dB/μm and low insertion loss of <0.3 dB are achieved in a length of 8 μm.

Original language	English
Title of host publication	2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580453
Publication status	Published - 2 Jul 2018
Event	2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018 - Wanchai, Hong Kong Duration: 29 Jul 2018 → 3 Aug 2018

Publication series

Name	2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018

Conference

Conference	2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018
Country/Territory	Hong Kong
City	Wanchai
Period	29/07/18 → 3/08/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Cite this

Xu, Y., Li, F., Yuan, J., Kang, Z., Huang, D., Zhang, X., & Wai, P. K. A. (2018). Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator. In 2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018 Article 8699527 (2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018). Institute of Electrical and Electronics Engineers Inc..

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title = "Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator",

abstract = "We propose a highly-efficient, low-loss, and polarization insensitive silicon-indium tin oxide electro-absorption modulator. High modulation efficiency of 3.18 dB/μm and low insertion loss of <0.3 dB are achieved in a length of 8 μm.",

author = "Yin Xu and Feng Li and Jinhui Yuan and Zhe Kang and Dongmei Huang and Xianting Zhang and Wai, {P. K.A.}",

year = "2018",

month = jul,

day = "2",

language = "English",

series = "2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018",

note = "2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018 ; Conference date: 29-07-2018 Through 03-08-2018",

}

Xu, Y, Li, F, Yuan, J, Kang, Z, Huang, D, Zhang, X & Wai, PKA 2018, Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator. in 2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018., 8699527, 2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018, Institute of Electrical and Electronics Engineers Inc., 2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018, Wanchai, Hong Kong, 29/07/18.

Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator. / Xu, Yin; Li, Feng; Yuan, Jinhui et al.
2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8699527 (2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator

AU - Xu, Yin

AU - Li, Feng

AU - Yuan, Jinhui

AU - Kang, Zhe

AU - Huang, Dongmei

AU - Zhang, Xianting

AU - Wai, P. K.A.

PY - 2018/7/2

Y1 - 2018/7/2

N2 - We propose a highly-efficient, low-loss, and polarization insensitive silicon-indium tin oxide electro-absorption modulator. High modulation efficiency of 3.18 dB/μm and low insertion loss of <0.3 dB are achieved in a length of 8 μm.

AB - We propose a highly-efficient, low-loss, and polarization insensitive silicon-indium tin oxide electro-absorption modulator. High modulation efficiency of 3.18 dB/μm and low insertion loss of <0.3 dB are achieved in a length of 8 μm.

UR - http://www.scopus.com/inward/record.url?scp=85065604556&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

AN - SCOPUS:85065604556

T3 - 2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018

BT - 2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018

Y2 - 29 July 2018 through 3 August 2018

ER -

Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator

Abstract

Publication series

Conference

ASJC Scopus subject areas

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