Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator

Yin Xu, Feng Li, Jinhui Yuan, Zhe Kang, Dongmei Huang, Xianting Zhang, P. K.A. Wai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

We propose a highly-efficient, low-loss, and polarization insensitive silicon-indium tin oxide electro-absorption modulator. High modulation efficiency of 3.18 dB/μm and low insertion loss of <0.3 dB are achieved in a length of 8 μm.

Original languageEnglish
Title of host publication2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580453
Publication statusPublished - 2 Jul 2018
Event2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018 - Wanchai, Hong Kong
Duration: 29 Jul 20183 Aug 2018

Publication series

Name2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018

Conference

Conference2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018
CountryHong Kong
CityWanchai
Period29/07/183/08/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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