PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers

J. Peng; S. T. Lau; C. Chao; Jiyan Dai; H. L.W. Chan; H. S. Luo; B. P. Zhu; Q. F. Zhou; K. K. Shung

doi:10.1007/s00339-009-5381-1

PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers

J. Peng, S. T. Lau, C. Chao, Jiyan Dai, H. L.W. Chan, H. S. Luo, B. P. Zhu, Q. F. Zhou, K. K. Shung

Research output: Journal article publication › Journal article › Academic research › peer-review

17 Citations (Scopus)

Abstract

In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and -6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (kt) and high piezoelectric constant (d33) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency.

Original language	English
Pages (from-to)	233-237
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	98
Issue number	1
DOIs	https://doi.org/10.1007/s00339-009-5381-1
Publication status	Published - 1 Jan 2010

ASJC Scopus subject areas

General Chemistry
General Materials Science

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10.1007/s00339-009-5381-1

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@article{5a8018ee7b5041cf85e2997a20b550b9,

title = "PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers",

abstract = "In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and -6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (kt) and high piezoelectric constant (d33) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency.",

author = "J. Peng and Lau, {S. T.} and C. Chao and Jiyan Dai and Chan, {H. L.W.} and Luo, {H. S.} and Zhu, {B. P.} and Zhou, {Q. F.} and Shung, {K. K.}",

year = "2010",

month = jan,

day = "1",

doi = "10.1007/s00339-009-5381-1",

language = "English",

volume = "98",

pages = "233--237",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "1",

}

TY - JOUR

T1 - PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers

AU - Peng, J.

AU - Lau, S. T.

AU - Chao, C.

AU - Dai, Jiyan

AU - Chan, H. L.W.

AU - Luo, H. S.

AU - Zhu, B. P.

AU - Zhou, Q. F.

AU - Shung, K. K.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and -6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (kt) and high piezoelectric constant (d33) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency.

AB - In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and -6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (kt) and high piezoelectric constant (d33) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency.

UR - http://www.scopus.com/inward/record.url?scp=71249130793&partnerID=8YFLogxK

U2 - 10.1007/s00339-009-5381-1

DO - 10.1007/s00339-009-5381-1

M3 - Journal article

SN - 0947-8396

VL - 98

SP - 233

EP - 237

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

ER -

PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers

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