Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide-Semiconductor Capacitor with HfTiON Gate Dielectric

Li Sheng Wang, Jing Ping Xu, Lu Liu, Han Han Lu, Pui To Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)

Abstract

Plasma nitridation is used for nitrogen incorporation in Ga2O3(Gd2O3) (GGO) as interfacial passivation layer for an InGaAs metal-oxide-semiconductor capacitor with a HfTiON gate dielectric. The nitrided GGO (GGON) on InGaAs can improve the interface quality with a low interface-state density at midgap ( 1.0 × 10-12cm-2eV-1, and result in good electrical properties for the device, e.g., low gate leakage current ( 8.5 × 10-6A/cm2at Vg= 1 V), small capacitance equivalent thickness (1.60 nm), and large equivalent dielectric constant (24.9). The mechanisms involved lie in the fact that the GGON interlayer can effectively suppress the formation of the interfacial In/Ga/As oxides and remove excess As atoms on the InGaAs surface, thus unpinning the Femi level at the GGON/InGaAs interface and improving the interface quality and electrical properties of the device.
Original languageEnglish
Article number7038221
Pages (from-to)1235-1240
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume62
Issue number4
DOIs
Publication statusPublished - 1 Apr 2015

Keywords

  • HfTiON gate-dielectric
  • InGaAs metal-oxide-semiconductor (MOS)
  • interface-state
  • nitrided Ga O (Gd O ) (GGON) interlayer 2 3 2 3
  • plasma-nitridation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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