Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

Shaobo Li; Zhaofeng Wang; Hanmei Jiang; Limei Zhang; Jingzheng Ren; Mingtao Zheng; Lichun Dong; Luyi Sun

doi:10.1039/c6cc04052g

Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

Shaobo Li, Zhaofeng Wang, Hanmei Jiang, Limei Zhang, Jingzheng Ren, Mingtao Zheng, Lichun Dong, Luyi Sun

Research output: Journal article publication › Journal article › Academic research › peer-review

108 Citations (Scopus)

Abstract

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

Original language	English
Pages (from-to)	10988-10991
Number of pages	4
Journal	Chemical Communications
Volume	52
Issue number	73
DOIs	https://doi.org/10.1039/c6cc04052g
Publication status	Published - 1 Jan 2016
Externally published	Yes

ASJC Scopus subject areas

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
General Chemistry
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1039/c6cc04052g

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abstract = "In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.",

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AU - Li, Shaobo

AU - Wang, Zhaofeng

AU - Jiang, Hanmei

AU - Zhang, Limei

AU - Ren, Jingzheng

AU - Zheng, Mingtao

AU - Dong, Lichun

AU - Sun, Luyi

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AB - In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

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DO - 10.1039/c6cc04052g

M3 - Journal article

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SP - 10988

EP - 10991

JO - Chemical Communications

JF - Chemical Communications

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Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

Abstract

ASJC Scopus subject areas

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