Piezoresistive effect of polysilicon films at high temperature

Mingxue Huo; Xiaowei Liu; Dan Zhang; Xilian Wang; Minghao Song

Piezoresistive effect of polysilicon films at high temperature

Mingxue Huo
, Xiaowei Liu
, Dan Zhang
, Xilian Wang
, Minghao Song

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained, considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 10¹⁹ cm^-3 are experimentally studied from room temperature to 560°C. Experimental results show that the polysilicon piezoresistors can work over 560°C.

Original language	English
Pages (from-to)	2115-2119
Number of pages	5
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	26
Issue number	11
Publication status	Published - Nov 2005
Externally published	Yes

Keywords

Gauge factor
Piezoresistive effect
Polysilicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Piezoresistive effect of polysilicon films at high temperature",

abstract = "The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained, considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 1019 cm-3 are experimentally studied from room temperature to 560°C. Experimental results show that the polysilicon piezoresistors can work over 560°C.",

keywords = "Gauge factor, Piezoresistive effect, Polysilicon",

author = "Mingxue Huo and Xiaowei Liu and Dan Zhang and Xilian Wang and Minghao Song",

year = "2005",

month = nov,

language = "English",

volume = "26",

pages = "2115--2119",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "11",

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TY - JOUR

T1 - Piezoresistive effect of polysilicon films at high temperature

AU - Huo, Mingxue

AU - Liu, Xiaowei

AU - Zhang, Dan

AU - Wang, Xilian

AU - Song, Minghao

PY - 2005/11

Y1 - 2005/11

N2 - The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained, considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 1019 cm-3 are experimentally studied from room temperature to 560°C. Experimental results show that the polysilicon piezoresistors can work over 560°C.

AB - The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained, considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 1019 cm-3 are experimentally studied from room temperature to 560°C. Experimental results show that the polysilicon piezoresistors can work over 560°C.

KW - Gauge factor

KW - Piezoresistive effect

KW - Polysilicon

UR - https://www.scopus.com/pages/publications/33644834667

M3 - Journal article

AN - SCOPUS:33644834667

SN - 0253-4177

VL - 26

SP - 2115

EP - 2119

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 11

ER -

Piezoresistive effect of polysilicon films at high temperature

Abstract

Keywords

ASJC Scopus subject areas

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