Piezoresistive effect of polysilicon films at high temperature

Mingxue Huo, Xiaowei Liu, Dan Zhang, Xilian Wang, Minghao Song

Research output: Journal article publicationJournal articleAcademic researchpeer-review

2 Citations (Scopus)

Abstract

The high-temperature piezoresistive effect of polysilicon films is investigated. The relation between gauge factors of heavy doped polysilicon films deposited by LPCVD and temperatures is researched and attained, considering experimental influences of deposition temperature and film thickness on gauge factors. Polysilicon films with a Boron-doped concentration of about 1019 cm-3 are experimentally studied from room temperature to 560°C. Experimental results show that the polysilicon piezoresistors can work over 560°C.

Original languageEnglish
Pages (from-to)2115-2119
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume26
Issue number11
Publication statusPublished - Nov 2005
Externally publishedYes

Keywords

  • Gauge factor
  • Piezoresistive effect
  • Polysilicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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