Physically-based low-frequency noise model for NFD SOI MOSFET's

Wei Jin; Philip Ching Ho Chan; Samuel K H Fung; P. K. Ko

Physically-based low-frequency noise model for NFD SOI MOSFET's

Wei Jin, Philip Ching Ho Chan, Samuel K H Fung, P. K. Ko

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

8 Citations (Scopus)

Abstract

The floating-body effect (FBE) in NFD SOI MOSFET's gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in noise spectrum and AC output impedance.

Original language	English
Title of host publication	IEEE International SOI Conference
Publisher	IEEE
Pages	23-24
Number of pages	2
Publication status	Published - 1 Dec 1998
Externally published	Yes
Event	Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, United States Duration: 5 Oct 1998 → 8 Oct 1998

Conference

Conference	Proceedings of the 1998 IEEE International SOI Conference
Country/Territory	United States
City	Stuart, FL
Period	5/10/98 → 8/10/98

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Physically-based low-frequency noise model for NFD SOI MOSFET's",

abstract = "The floating-body effect (FBE) in NFD SOI MOSFET's gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in noise spectrum and AC output impedance.",

author = "Wei Jin and Chan, {Philip Ching Ho} and Fung, {Samuel K H} and Ko, {P. K.}",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "23--24",

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note = "Proceedings of the 1998 IEEE International SOI Conference ; Conference date: 05-10-1998 Through 08-10-1998",

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AU - Jin, Wei

AU - Chan, Philip Ching Ho

AU - Fung, Samuel K H

AU - Ko, P. K.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The floating-body effect (FBE) in NFD SOI MOSFET's gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in noise spectrum and AC output impedance.

AB - The floating-body effect (FBE) in NFD SOI MOSFET's gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in noise spectrum and AC output impedance.

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M3 - Conference article published in proceeding or book

SP - 23

EP - 24

BT - IEEE International SOI Conference

PB - IEEE

T2 - Proceedings of the 1998 IEEE International SOI Conference

Y2 - 5 October 1998 through 8 October 1998

ER -

Physically-based low-frequency noise model for NFD SOI MOSFET's

Abstract

Conference

ASJC Scopus subject areas

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