Abstract
The floating-body effect (FBE) in NFD SOI MOSFET's gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in noise spectrum and AC output impedance.
Original language | English |
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Title of host publication | IEEE International SOI Conference |
Publisher | IEEE |
Pages | 23-24 |
Number of pages | 2 |
Publication status | Published - 1 Dec 1998 |
Externally published | Yes |
Event | Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, United States Duration: 5 Oct 1998 → 8 Oct 1998 |
Conference
Conference | Proceedings of the 1998 IEEE International SOI Conference |
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Country/Territory | United States |
City | Stuart, FL |
Period | 5/10/98 → 8/10/98 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering