Physically-based low-frequency noise model for NFD SOI MOSFET's

Wei Jin, Philip Ching Ho Chan, Samuel K H Fung, P. K. Ko

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

7 Citations (Scopus)


The floating-body effect (FBE) in NFD SOI MOSFET's gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in noise spectrum and AC output impedance.
Original languageEnglish
Title of host publicationIEEE International SOI Conference
Number of pages2
Publication statusPublished - 1 Dec 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International SOI Conference - Stuart, FL, United States
Duration: 5 Oct 19988 Oct 1998


ConferenceProceedings of the 1998 IEEE International SOI Conference
Country/TerritoryUnited States
CityStuart, FL

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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