Abstract
An accurate submicrometer MOSFET device model for Silicon-On-Insulator (SOI) technology suitable for analog as well as digital applications has been developed. In developing this model care has been taken in retaining the basic functional form of physical models while improving the model accuracy. In addition to the commonly included effects in the SOI MOSFET model, we have given careful consideration to source/drain parasitic resistance. kink effect, self-heating and model continuity. The accuracy of the model is validated with experimental data and found to be in good agreement.
Original language | English |
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Pages (from-to) | 949-952 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
Publication status | Published - 1 Dec 1995 |
Externally published | Yes |
Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, United States Duration: 10 Dec 1995 → 13 Dec 1995 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering