Physically based device model for fully depleted and nearly fully depleted SOI MOSFET

Srinivasa R. Banna, Philip Ching Ho Chan, Mansun Chan, Ping K. Ko

Research output: Journal article publicationConference articleAcademic researchpeer-review

1 Citation (Scopus)

Abstract

An accurate submicrometer MOSFET device model for Silicon-On-Insulator (SOI) technology suitable for analog as well as digital applications has been developed. In developing this model care has been taken in retaining the basic functional form of physical models while improving the model accuracy. In addition to the commonly included effects in the SOI MOSFET model, we have given careful consideration to source/drain parasitic resistance. kink effect, self-heating and model continuity. The accuracy of the model is validated with experimental data and found to be in good agreement.
Original languageEnglish
Pages (from-to)949-952
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1 Dec 1995
Externally publishedYes
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, United States
Duration: 10 Dec 199513 Dec 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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