Abstract
Photovoltaic MoS2/Si nanowire array (SiNWA) heterojunction photodetectors (PDs) are constructed and investigated, which exhibit excellent photoresponse properties to light illumination at wavelengths from the deep ultraviolet to the near-infrared. Further photoresponse analysis reveals that a high responsivity of 53.5 A/W and a specific detectivity of 2.8 × 1013 Jones, as well as fast response speeds of 2.9/7.3 μs at 50 kHz are achieved in a MoS2/SiNWA heterojunction device. The high performances could be attributed to the high-quality heterojunction between MoS2 and the SiNWA. Such high performances of MoS2/SiNWA PDs are much better than those of previously reported MoS2-based PDs, suggesting that MoS2/SiNWA heterojunction devices have great potential in optoelectronic applications.
Original language | English |
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Pages (from-to) | 272-280 |
Number of pages | 9 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 182 |
DOIs | |
Publication status | Published - 1 Aug 2018 |
Keywords
- Heterojunction
- Molybdenum disulfide
- Photodetectors
- Self-powered
- Si nanowire arrays
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films