Photothermal radiometric imaging of semiconductors

S. J. Sheard; R. K. Appel; Michael Geoffrey Somekh

doi:10.1049/el:19870159

Photothermal radiometric imaging of semiconductors

S. J. Sheard, R. K. Appel, Michael Geoffrey Somekh

Research output: Journal article publication › Journal article › Academic research › peer-review

10 Citations (Scopus)

Abstract

It has recently been reported that photoexcited carriers contribute to the contrast mechanism for thermal imaging of semiconductors. The letter demonstrates the applications and significance of this effect for imaging semiconductors with photothermal radiometry (PTR). The method leads to a direct way of monitoring the dynamics of the carrier plasma. The theoretical results are used to interpret the experimental results obtained from several semiconductor materials.

Original language	English
Pages (from-to)	227-228
Number of pages	2
Journal	Electronics Letters
Volume	23
Issue number	5
DOIs	https://doi.org/10.1049/el:19870159
Publication status	Published - 1 Jan 1987
Externally published	Yes

Keywords

Carrier lifetimes
Plasma waves
Radiometry
Semiconductor devices and materials
Semiconductors

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19870159

Cite this

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AU - Somekh, Michael Geoffrey

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AB - It has recently been reported that photoexcited carriers contribute to the contrast mechanism for thermal imaging of semiconductors. The letter demonstrates the applications and significance of this effect for imaging semiconductors with photothermal radiometry (PTR). The method leads to a direct way of monitoring the dynamics of the carrier plasma. The theoretical results are used to interpret the experimental results obtained from several semiconductor materials.

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KW - Plasma waves

KW - Radiometry

KW - Semiconductor devices and materials

KW - Semiconductors

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DO - 10.1049/el:19870159

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JF - Electronics Letters

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Photothermal radiometric imaging of semiconductors

Abstract

Keywords

ASJC Scopus subject areas

More information

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