Photothermal radiometric imaging of semiconductors

S. J. Sheard, R. K. Appel, Michael Geoffrey Somekh

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)

Abstract

It has recently been reported that photoexcited carriers contribute to the contrast mechanism for thermal imaging of semiconductors. The letter demonstrates the applications and significance of this effect for imaging semiconductors with photothermal radiometry (PTR). The method leads to a direct way of monitoring the dynamics of the carrier plasma. The theoretical results are used to interpret the experimental results obtained from several semiconductor materials.
Original languageEnglish
Pages (from-to)227-228
Number of pages2
JournalElectronics Letters
Volume23
Issue number5
DOIs
Publication statusPublished - 1 Jan 1987
Externally publishedYes

Keywords

  • Carrier lifetimes
  • Plasma waves
  • Radiometry
  • Semiconductor devices and materials
  • Semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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