Abstract
Palladium diselenide (PdSe2) films exhibit a high charge carrier mobility and sensitivity in photodetection. In this work, wafer-scale PdSe2 thin films with controllable thickness have been synthesized by the selenization of Pd films. A PdSe2-based photodetector can detect a broad wavelength ranging from 420 nm to 1200 nm. The responsivity and detectivity can reach 1.96 × 103 A W-1 and 1.72 × 1010 W Hz-1/2 at V SD = 3 V, respectively. The figure of merit of the photodetection are comparable to the mechanically exfoliated PdSe2 based photodetector. This work demonstrated that selenization is a facile method to synthesize PdSe2 films in large scale and the films are promising for broadband photodetection.
Original language | English |
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Article number | 065102 |
Journal | Journal of Physics D: Applied Physics |
Volume | 53 |
Issue number | 6 |
DOIs | |
Publication status | Published - 6 Feb 2020 |
Keywords
- 2D layered material
- field effect transistors
- palladium diselenide
- photodetection
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films