Photon-induced conduction modulation in SiO2thin films embedded with Ge nanocrystals

L. Ding, T. P. Chen, M. Yang, J. I. Wong, Y. Liu, Siu Fung Yu, F. R. Zhu, M. C. Tan, S. Fung, C. H. Tung, A. D. Trigg

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10 Citations (Scopus)


The authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices.
Original languageEnglish
Article number103102
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 16 Mar 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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