Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air

Y. G. Wang, Shu Ping Lau, H. W. Lee, Siu Fung Yu, B. K. Tay, X. H. Zhang, H. H. Hng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

394 Citations (Scopus)


Zinc oxide (ZnO) films were synthesized by thermal oxidation of metallic zinc films in air. The influence of annealing temperatures ranging from 320 to 1000°C on the structural and optical properties of ZnO films was also investigated using x-ray diffraction and room temperature photoluminescence (PL). It was observed that the ZnO film annealed at 410°C exhibits the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied.
Original languageEnglish
Pages (from-to)354-358
Number of pages5
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 1 Jul 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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