Abstract
A layer of Pr 2 O 3 with a thickness of about 20 Å was grown on Si(100) at room temperature by evaporating Pr in an oxygen ambiance. The interaction of the Pr 2 O 3 overlayer with Si(100) has been investigated in situ after annealing at different temperatures by means of X-ray photoelectron spectroscopy (XPS). The Pr 2 O 3 deposition enhances the oxidation rate of the substrate. The silicon atoms can easily diffuse from the substrate into the Pr 2 O 3 layer, forming a Pr-O-Si silicate as well as SiO 2 . Annealing facilitates the diffusion of the silicon atoms, leading to the continual growth of the silicate. The intensity of Pr 2 O 3 decreases at temperatures over 590 K and the silicate becomes dominant after annealing at 790 K. Angle-dependent XPS taken after annealing at 1090 K indicates that the silicate moves to the top surface. The amount of SiO 2 remains almost constant during annealing. © 2002 Elsevier Science B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 608-614 |
Number of pages | 7 |
Journal | Microelectronic Engineering |
Volume | 66 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1 Apr 2003 |
Externally published | Yes |
Event | IUMRS-ICEM 2002 - Xi an, China Duration: 10 Jun 2002 → 14 Jun 2002 |
Keywords
- Annealing
- High dielectric constant
- Pr 2 O 3
- Surface and interface
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering