Photoemission study of the interaction of a Pr 2 O 3 overlayer with Si(100) as a function of annealing temperature

Z.M. Wang, J.X. Wu, M.S. Ma, Wei Chen, Q. Fang, J.-Y. Zhang

Research output: Journal article publicationConference articleAcademic researchpeer-review

16 Citations (Scopus)

Abstract

A layer of Pr 2 O 3 with a thickness of about 20 Å was grown on Si(100) at room temperature by evaporating Pr in an oxygen ambiance. The interaction of the Pr 2 O 3 overlayer with Si(100) has been investigated in situ after annealing at different temperatures by means of X-ray photoelectron spectroscopy (XPS). The Pr 2 O 3 deposition enhances the oxidation rate of the substrate. The silicon atoms can easily diffuse from the substrate into the Pr 2 O 3 layer, forming a Pr-O-Si silicate as well as SiO 2 . Annealing facilitates the diffusion of the silicon atoms, leading to the continual growth of the silicate. The intensity of Pr 2 O 3 decreases at temperatures over 590 K and the silicate becomes dominant after annealing at 790 K. Angle-dependent XPS taken after annealing at 1090 K indicates that the silicate moves to the top surface. The amount of SiO 2 remains almost constant during annealing. © 2002 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)608-614
Number of pages7
JournalMicroelectronic Engineering
Volume66
Issue number1-4
DOIs
Publication statusPublished - 1 Apr 2003
Externally publishedYes
EventIUMRS-ICEM 2002 - Xi an, China
Duration: 10 Jun 200214 Jun 2002

Keywords

  • Annealing
  • High dielectric constant
  • Pr 2 O 3
  • Surface and interface
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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