Phonon-Mediated Colossal Magnetoresistance in Graphene/Black Phosphorus Heterostructures

Yanpeng Liu, Indra Yudhistira, Ming Yang, Evan Laksono, Yong Zheng Luo, Jianyi Chen, Junpeng Lu, Yuan Ping Feng, Shaffique Adam, Kian Ping Loh

Research output: Journal article publicationJournal articleAcademic researchpeer-review

29 Citations (Scopus)


There is a huge demand for magnetoresistance (MR) sensors with high sensitivity, low energy consumption, and room temperature operation. It is well-known that spatial charge inhomogeneity due to impurities or defects introduces mobility fluctuations in monolayer graphene and gives rise to MR in the presence of an externally applied magnetic field. However, to realize a MR sensor based on this effect is hampered by the difficulty in controlling the spatial distribution of impurities and the weak magnetoresistance effect at the monolayer regime. Here, we fabricate a highly stable monolayer graphene-on-black phosphorus (G/BP) heterostructure device that exhibits a giant MR of 775% at 9 T magnetic field and 300 K, exceeding by far the MR effects from devices made from either monolayer graphene or few-layer BP alone. The positive MR of the G/BP device decreases when the temperature is lowered, indicating a phonon-mediated process in addition to scattering by charge impurities. Moreover, a nonlocal MR of >10 000% is achieved for the G/BP device at room temperature due to an enhanced flavor Hall effect induced by the BP channel. Our results show that electron-phonon coupling between 2D material and a suitable substrate can be exploited to create giant MR effects in Dirac semimetals.

Original languageEnglish
Pages (from-to)3377-3383
Number of pages7
JournalNano Letters
Issue number6
Publication statusPublished - 13 Jun 2018


  • black phosphorus
  • Graphene
  • magnetoresistance
  • nonlocal response
  • phonon-mediated process

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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