Phase patterning for ohmic homojunction contact in MoTe2

Suyeon Cho, Sera Kim, Jung Ho Kim, Jiong Zhao, Jinbong Seok, Dong Hoon Keum, Jaeyoon Baik, Duk Hyun Choe, K. J. Chang, Kazu Suenaga, Sung Wng Kim, Young Hee Lee, Heejun Yang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

Artificial van der Waals heterostructures with two-dimensional (2D) atomic crystals are promising as an active channel or as a buffer contact layer for next-generation devices. However, genuine 2D heterostructure devices remain limited because of impurity-involved transfer process and metastable and inhomogeneous heterostructure formation. We used laser-induced phase patterning, a polymorph engineering, to fabricate an ohmic heterophase homojunction between semiconducting hexagonal (2H) and metallic monoclinic (1T') molybdenum ditelluride (MoTe2) that is stable up to 300°C and increases the carrier mobility of the MoTe2 transistor by a factor of about 50, while retaining a high on/off current ratio of 106. In situ scanning transmission electron microscopy results combined with theoretical calculations reveal that the Te vacancy triggers the local phase transition in MoTe2, achieving a true 2D device with an ohmic contact.
Original languageEnglish
Pages (from-to)625-628
Number of pages4
JournalScience
Volume349
Issue number6248
DOIs
Publication statusPublished - 7 Aug 2015
Externally publishedYes

ASJC Scopus subject areas

  • General

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