Phase and polarization modulation in two-dimensional In2Se3 via in situ transmission electron microscopy

Xiaodong Zheng, Wei Han, Ke Yang, Lok Wing Wong, Chi Shing Tsang, Ka Hei Lai, Fangyuan Zheng, Tiefeng Yang, Shu Ping Lau, Thuc Hue Ly, Ming Yang, Jiong Zhao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

26 Citations (Scopus)

Abstract

Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In2Se3 with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β′ phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In2Se3 remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In2Se3. We achieve reversible AFE and out-of-plane FE phase transition in 2D In2Se3 by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In2Se3 can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.

Original languageEnglish
Article numbereabo0773
JournalScience advances
Volume8
Issue number42
DOIs
Publication statusPublished - Oct 2022

ASJC Scopus subject areas

  • General

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