Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers

Minchao Qin, Junjie Ma, Weijun Ke, Pingli Qin, Hongwei Lei, Hong Tao, Xiaolu Zheng, Liangbin Xiong, Qin Liu, Zhiliang Chen, Junzheng Lu, Guang Yang, Guojia Fang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

137 Citations (Scopus)

Abstract

Indium oxide (In2O3) as a promising n-type semiconductor material has been widely employed in optoelectronic applications. In this work, we applied low-temperature solution-processed In2O3 nanocrystalline film as an electron selective layer (ESL) in perovskite solar cells (PSCs) for the first time. By taking advantages of good optical and electrical properties of In2O3 such as high mobility, wide band gap, and high transmittance, we obtained In2O3-based PSCs with a good efficiency exceeding 13% after optimizing the concentration of the precursor solution and the annealing temperature. Furthermore, to enhance the performance of the In2O3-based PSCs, a phenyl-C61-butyric acid methyl ester (PCBM) layer was introduced to modify the surface of the In2O3 film. The PCBM film could fill up the pinholes or cracks along In2O3 grain boundaries to passivate the defects and make the ESL extremely compact and uniform, which is conducive to suppressing the charge recombination. As a result, the efficiency of the In2O3-based PSC was improved to 14.83% accompanied with VOC, JSC, and FF being 1.08 V, 20.06 mA cm-2, and 0.685, respectively.

Original languageEnglish
Pages (from-to)8460-8466
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number13
DOIs
Publication statusPublished - 20 Apr 2016

Keywords

  • electron selective layer
  • indium oxide
  • low temperature
  • PCBM
  • perovskite solar cells
  • sol-gel method

ASJC Scopus subject areas

  • General Materials Science

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