TY - JOUR
T1 - Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers
AU - Qin, Minchao
AU - Ma, Junjie
AU - Ke, Weijun
AU - Qin, Pingli
AU - Lei, Hongwei
AU - Tao, Hong
AU - Zheng, Xiaolu
AU - Xiong, Liangbin
AU - Liu, Qin
AU - Chen, Zhiliang
AU - Lu, Junzheng
AU - Yang, Guang
AU - Fang, Guojia
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/4/20
Y1 - 2016/4/20
N2 - Indium oxide (In2O3) as a promising n-type semiconductor material has been widely employed in optoelectronic applications. In this work, we applied low-temperature solution-processed In2O3 nanocrystalline film as an electron selective layer (ESL) in perovskite solar cells (PSCs) for the first time. By taking advantages of good optical and electrical properties of In2O3 such as high mobility, wide band gap, and high transmittance, we obtained In2O3-based PSCs with a good efficiency exceeding 13% after optimizing the concentration of the precursor solution and the annealing temperature. Furthermore, to enhance the performance of the In2O3-based PSCs, a phenyl-C61-butyric acid methyl ester (PCBM) layer was introduced to modify the surface of the In2O3 film. The PCBM film could fill up the pinholes or cracks along In2O3 grain boundaries to passivate the defects and make the ESL extremely compact and uniform, which is conducive to suppressing the charge recombination. As a result, the efficiency of the In2O3-based PSC was improved to 14.83% accompanied with VOC, JSC, and FF being 1.08 V, 20.06 mA cm-2, and 0.685, respectively.
AB - Indium oxide (In2O3) as a promising n-type semiconductor material has been widely employed in optoelectronic applications. In this work, we applied low-temperature solution-processed In2O3 nanocrystalline film as an electron selective layer (ESL) in perovskite solar cells (PSCs) for the first time. By taking advantages of good optical and electrical properties of In2O3 such as high mobility, wide band gap, and high transmittance, we obtained In2O3-based PSCs with a good efficiency exceeding 13% after optimizing the concentration of the precursor solution and the annealing temperature. Furthermore, to enhance the performance of the In2O3-based PSCs, a phenyl-C61-butyric acid methyl ester (PCBM) layer was introduced to modify the surface of the In2O3 film. The PCBM film could fill up the pinholes or cracks along In2O3 grain boundaries to passivate the defects and make the ESL extremely compact and uniform, which is conducive to suppressing the charge recombination. As a result, the efficiency of the In2O3-based PSC was improved to 14.83% accompanied with VOC, JSC, and FF being 1.08 V, 20.06 mA cm-2, and 0.685, respectively.
KW - electron selective layer
KW - indium oxide
KW - low temperature
KW - PCBM
KW - perovskite solar cells
KW - sol-gel method
UR - http://www.scopus.com/inward/record.url?scp=84964478136&partnerID=8YFLogxK
U2 - 10.1021/acsami.5b12849
DO - 10.1021/acsami.5b12849
M3 - Journal article
AN - SCOPUS:84964478136
SN - 1944-8244
VL - 8
SP - 8460
EP - 8466
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 13
ER -