Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Mingjun Zhang; Jinyang Huang; Zihan Wang; Paramasivam Balasubramanian; Yan Yan; Ye Zhou; Su Ting Han; Lei Lu; Meng Zhang

doi:10.1109/JEDS.2024.3466956

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Mingjun Zhang, Jinyang Huang, Zihan Wang, Paramasivam Balasubramanian, Yan Yan, Ye Zhou, Su Ting Han, Lei Lu, Meng Zhang

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of ~71.8 cm2/Vs with a threshold voltage of ~-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis.

Original language	English
Pages (from-to)	868-874
Number of pages	7
Journal	IEEE Journal of the Electron Devices Society
Volume	12
DOIs	https://doi.org/10.1109/JEDS.2024.3466956
Publication status	Published - 24 Sept 2024

Keywords

InZnO
magnetron sputtering
process optimization
thin-film transistors

ASJC Scopus subject areas

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/JEDS.2024.3466956

Cite this

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title = "Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations",

abstract = "The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of \textasciitilde{}71.8 cm2/Vs with a threshold voltage of \textasciitilde{}-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis.",

keywords = "InZnO, magnetron sputtering, process optimization, thin-film transistors",

author = "Mingjun Zhang and Jinyang Huang and Zihan Wang and Paramasivam Balasubramanian and Yan Yan and Ye Zhou and Han, \{Su Ting\} and Lei Lu and Meng Zhang",

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language = "English",

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T1 - Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

AU - Zhang, Mingjun

AU - Huang, Jinyang

AU - Wang, Zihan

AU - Balasubramanian, Paramasivam

AU - Yan, Yan

AU - Zhou, Ye

AU - Han, Su Ting

AU - Lu, Lei

AU - Zhang, Meng

PY - 2024/9/24

Y1 - 2024/9/24

N2 - The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of ~71.8 cm2/Vs with a threshold voltage of ~-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis.

AB - The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of ~71.8 cm2/Vs with a threshold voltage of ~-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis.

KW - InZnO

KW - magnetron sputtering

KW - process optimization

KW - thin-film transistors

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U2 - 10.1109/JEDS.2024.3466956

DO - 10.1109/JEDS.2024.3466956

M3 - Journal article

AN - SCOPUS:85205145606

SN - 2168-6734

VL - 12

SP - 868

EP - 874

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Abstract

Keywords

ASJC Scopus subject areas

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