Pentacene thin-film transistors with HfO 2 gate dielectric annealed in NH 3 or N 2O

L. F. Deng, Wing Man Tang, C. H. Leung, P. T. Lai, J. P. Xu, C. M. Che

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

Pentacene-based Organic Thin-Film Transistor (OTFT) with HfO 2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N 2O or NH 3 at 200 °C. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the OTFT annealed in NH 3 shows higher carrier mobility, larger on/off current ratio, smaller sub-threshold swing and smaller Hooge parameter than the OTFT annealed in N 2O. Therefore, NH 3-annealed HfO 2 is a promising gate dielectric for the fabrication of high-performance OTFTs.
Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
Publication statusPublished - 1 Dec 2008
Externally publishedYes
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, Hong Kong
Duration: 8 Dec 200810 Dec 2008

Conference

Conference2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHong Kong
Period8/12/0810/12/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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