Abstract
Pentacene-based Organic Thin-Film Transistor (OTFT) with HfO 2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N 2O or NH 3 at 200 °C. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the OTFT annealed in NH 3 shows higher carrier mobility, larger on/off current ratio, smaller sub-threshold swing and smaller Hooge parameter than the OTFT annealed in N 2O. Therefore, NH 3-annealed HfO 2 is a promising gate dielectric for the fabrication of high-performance OTFTs.
Original language | English |
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Title of host publication | 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC |
DOIs | |
Publication status | Published - 1 Dec 2008 |
Externally published | Yes |
Event | 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, Hong Kong Duration: 8 Dec 2008 → 10 Dec 2008 |
Conference
Conference | 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC |
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Country/Territory | Hong Kong |
City | Hong Kong |
Period | 8/12/08 → 10/12/08 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering