Pentacene organic thin-film transistor with HfYO gate dielectric made on adhesive vacuum tape

C. Y. Han, C. H. Leung, P. T. Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

2 Citations (Scopus)

Abstract

Pentacene organic thin-film transistor (OTFT) with HfYO as gate dielectric has been fabricated at room temperature on adhesive flexible vacuum tape and shows high performance. The threshold voltage is as low as -1.77 V due to the high-κ gate dielectric employed. A small sub-threshold swing (SS) of 0.145 V/dec indicates good interface between the gate dielectric and pentacene film. Atomic force microscopy (AFM) reveals that large pentacene gains form on the HfYO gate dielectric, leading to a high carrier mobility of 0.236 cm2V-1s-1. These good results suggest that the adhesive vacuum tape can be used as the substrate for adhesive flexible OTFT, and HfYO is a promising gate dielectric for high-performance pentacene OTFT.
Original languageEnglish
Pages (from-to)644-646
Number of pages3
JournalElectronics Letters
Volume51
Issue number8
DOIs
Publication statusPublished - 1 Jan 2015

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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