Partial oxidation of thin film ruthenium in mos structure-chemical, compositional and electrical properties

Emil V. Jelenkovic, Suet To

Research output: Journal article publicationJournal articleAcademic researchpeer-review

2 Citations (Scopus)


Partially oxidized Ru film in MOS structure is investigated from compositional, chemical and electrical point of view with a purpose of revealing the role of oxygen on flatband voltage. The oxidation causes film roughening and non-uniform RuO2 growth front. Presence of RuO2 close to the interface and at the interface is confirmed by X-ray photoelectron spectroscopy and Z-contrast imaging. This is related to flatband voltage shift, equivalent to the work function of RuO2. Oxidation of Ru increases the interface states density.
Original languageEnglish
JournalECS Solid State Letters
Issue number5
Publication statusPublished - 26 Jul 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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