Partial oxidation of thin film ruthenium in mos structure-chemical, compositional and electrical properties

Emil V. Jelenkovic; Suet To

doi:10.1149/2.008305ssl

Partial oxidation of thin film ruthenium in mos structure-chemical, compositional and electrical properties

Emil V. Jelenkovic, Suet To

Research output: Journal article publication › Journal article › Academic research › peer-review

4 Citations (Scopus)

Abstract

Partially oxidized Ru film in MOS structure is investigated from compositional, chemical and electrical point of view with a purpose of revealing the role of oxygen on flatband voltage. The oxidation causes film roughening and non-uniform RuO2 growth front. Presence of RuO2 close to the interface and at the interface is confirmed by X-ray photoelectron spectroscopy and Z-contrast imaging. This is related to flatband voltage shift, equivalent to the work function of RuO2. Oxidation of Ru increases the interface states density.

Original language	English
Journal	ECS Solid State Letters
Volume	2
Issue number	5
DOIs	https://doi.org/10.1149/2.008305ssl
Publication status	Published - 26 Jul 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1149/2.008305ssl

http://hdl.handle.net/10397/5889

Cite this

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abstract = "Partially oxidized Ru film in MOS structure is investigated from compositional, chemical and electrical point of view with a purpose of revealing the role of oxygen on flatband voltage. The oxidation causes film roughening and non-uniform RuO2 growth front. Presence of RuO2 close to the interface and at the interface is confirmed by X-ray photoelectron spectroscopy and Z-contrast imaging. This is related to flatband voltage shift, equivalent to the work function of RuO2. Oxidation of Ru increases the interface states density.",

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AU - To, Suet

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N2 - Partially oxidized Ru film in MOS structure is investigated from compositional, chemical and electrical point of view with a purpose of revealing the role of oxygen on flatband voltage. The oxidation causes film roughening and non-uniform RuO2 growth front. Presence of RuO2 close to the interface and at the interface is confirmed by X-ray photoelectron spectroscopy and Z-contrast imaging. This is related to flatband voltage shift, equivalent to the work function of RuO2. Oxidation of Ru increases the interface states density.

AB - Partially oxidized Ru film in MOS structure is investigated from compositional, chemical and electrical point of view with a purpose of revealing the role of oxygen on flatband voltage. The oxidation causes film roughening and non-uniform RuO2 growth front. Presence of RuO2 close to the interface and at the interface is confirmed by X-ray photoelectron spectroscopy and Z-contrast imaging. This is related to flatband voltage shift, equivalent to the work function of RuO2. Oxidation of Ru increases the interface states density.

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Partial oxidation of thin film ruthenium in mos structure-chemical, compositional and electrical properties

Abstract

ASJC Scopus subject areas

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