Partially oxidized Ru film in MOS structure is investigated from compositional, chemical and electrical point of view with a purpose of revealing the role of oxygen on flatband voltage. The oxidation causes film roughening and non-uniform RuO2 growth front. Presence of RuO2 close to the interface and at the interface is confirmed by X-ray photoelectron spectroscopy and Z-contrast imaging. This is related to flatband voltage shift, equivalent to the work function of RuO2. Oxidation of Ru increases the interface states density.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering