Oxide thin films for tunable microwave devices

X. X. Xi; Hong Cheng Li; Weidong Si; A. A. Sirenko; I. A. Akimov; J. R. Fox; A. M. Clark; Jianhua Hao

Oxide thin films for tunable microwave devices

X. X. Xi, Hong Cheng Li, Weidong Si, A. A. Sirenko, I. A. Akimov, J. R. Fox, A. M. Clark, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

Oxide thin films have been studied for frequency and phase agile electronics. The electric-field tuning of microwave devices employs ferroelectrics, while the Magnetic-field tuning uses ferrites. The critical material parameters for ferroelectric thin films are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechanisms of these properties and the research efforts to improve them in ferroelectric thin films.

Original language	English
Pages (from-to)	393-405
Number of pages	13
Journal	Journal of Electroceramics
Volume	4
Issue number	2
Publication status	Published - 1 Jun 2000
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Materials Chemistry
Electrical and Electronic Engineering

Cite this

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title = "Oxide thin films for tunable microwave devices",

abstract = "Oxide thin films have been studied for frequency and phase agile electronics. The electric-field tuning of microwave devices employs ferroelectrics, while the Magnetic-field tuning uses ferrites. The critical material parameters for ferroelectric thin films are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechanisms of these properties and the research efforts to improve them in ferroelectric thin films.",

author = "Xi, {X. X.} and Li, {Hong Cheng} and Weidong Si and Sirenko, {A. A.} and Akimov, {I. A.} and Fox, {J. R.} and Clark, {A. M.} and Jianhua Hao",

year = "2000",

month = jun,

day = "1",

language = "English",

volume = "4",

pages = "393--405",

journal = "Journal of Electroceramics",

issn = "1385-3449",

publisher = "Springer Netherlands",

number = "2",

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TY - JOUR

T1 - Oxide thin films for tunable microwave devices

AU - Xi, X. X.

AU - Li, Hong Cheng

AU - Si, Weidong

AU - Sirenko, A. A.

AU - Akimov, I. A.

AU - Fox, J. R.

AU - Clark, A. M.

AU - Hao, Jianhua

PY - 2000/6/1

Y1 - 2000/6/1

N2 - Oxide thin films have been studied for frequency and phase agile electronics. The electric-field tuning of microwave devices employs ferroelectrics, while the Magnetic-field tuning uses ferrites. The critical material parameters for ferroelectric thin films are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechanisms of these properties and the research efforts to improve them in ferroelectric thin films.

AB - Oxide thin films have been studied for frequency and phase agile electronics. The electric-field tuning of microwave devices employs ferroelectrics, while the Magnetic-field tuning uses ferrites. The critical material parameters for ferroelectric thin films are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechanisms of these properties and the research efforts to improve them in ferroelectric thin films.

UR - http://www.scopus.com/inward/record.url?scp=0034207109&partnerID=8YFLogxK

M3 - Journal article

SN - 1385-3449

VL - 4

SP - 393

EP - 405

JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 2

ER -

Oxide thin films for tunable microwave devices

Abstract

ASJC Scopus subject areas

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