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Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
M.-F. Tsai
, J. Jiang
, P.-W. Shao
, Y.-H. Lai
, J.-W. Chen
, S.-Z. Ho
, Y.-C. Chen
, Din-ping Tsai
, Y.-H. Chu
Research output
:
Journal article publication
›
Journal article
›
Academic research
›
peer-review
36
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Citations (Scopus)
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Keyphrases
Ferroelectric Field-effect Transistor (FeFET)
100%
Oxides
100%
Heteroepitaxy
100%
Flexible Ferroelectrics
100%
Thermal Properties
20%
Low Power Consumption
20%
Field Effect
20%
Temperature Measurement
20%
Current Ratio
20%
Thermal Stability
20%
Semiconductors
20%
Transistor
20%
Ferroelectric Materials
20%
Mechanical Bending
20%
Thermal-mechanical
20%
Flexible System
20%
Flexible Substrate
20%
Small Bending Radii
20%
Design Flexibility
20%
Transfer Curves
20%
Bending Measurement
20%
Flexible Devices
20%
Cyclability
20%
Internet of Things
20%
Wearable Devices
20%
Superior Thermal Stability
20%
Integration Capability
20%
Stability-flexibility
20%
Next-generation Technology
20%
Muscovite Mica
20%
Aluminum Doped Zinc Oxide Films
20%
Nondestructive Readout
20%
Channel Layer
20%
Ferroelectric Gate Dielectric
20%
Epitaxial Integration
20%
Property Integration
20%
Muscovite
20%
Mechanical Flexibility
20%
On-state Current
20%
Material Science
Heteroepitaxy
100%
Transistor
100%
Ferroelectric Material
100%
Oxide Compound
100%
Field Effect Transistors
57%
Thermal Stability
28%
Zinc Oxide
14%
Film
14%
Wearable Sensor
14%
Aluminum
14%
Thermal Property
14%
Oxide Film
14%
Dielectric Material
14%
Engineering
Field-Effect Transistor
100%
Small Bending Radius
25%
Oxide Film
25%
Gate Dielectric
25%
Low Power Consumption
25%
Current Ratio
25%
Generation Technology
25%
Channel Layer
25%
Flexible Substrate
25%
Wearable Sensor
25%
Flexible Electronics
25%
Internet-Of-Things
25%
Aluminum-Doped Zinc Oxide
25%