Origin of room temperature ferromagnetism in ZnO:Cu films

T. S. Herng, Shu Ping Lau, Siu Fung Yu, H. Y. Yang, X. H. Ji, J. S. Chen, N. Yasui, H. Inaba

Research output: Journal article publicationJournal articleAcademic researchpeer-review

129 Citations (Scopus)


Copper-doped ZnO (ZnO:Cu) films were prepared on silicon substrates by filtered cathodic vacuum arc technique at room temperature using a Zn target containing 5 at. % of Cu. Room temperature ferromagnetism was observed in the ZnO:Cu films with saturation magnetization of 0.037 μB Cu atom. The origin of the ferromagnetism in ZnO:Cu was mainly due to Cu ions substituted into the ZnO lattice. X-ray diffraction, x-ray photoelectron spectroscopy, and transmission electron microscopy revealed that no ferromagnetic-related secondary phase could be detected in ZnO:Cu.
Original languageEnglish
Article number086101
JournalJournal of Applied Physics
Issue number8
Publication statusPublished - 25 May 2006
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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