Abstract
Copper-doped ZnO (ZnO:Cu) films were prepared on silicon substrates by filtered cathodic vacuum arc technique at room temperature using a Zn target containing 5 at. % of Cu. Room temperature ferromagnetism was observed in the ZnO:Cu films with saturation magnetization of 0.037 μB Cu atom. The origin of the ferromagnetism in ZnO:Cu was mainly due to Cu ions substituted into the ZnO lattice. X-ray diffraction, x-ray photoelectron spectroscopy, and transmission electron microscopy revealed that no ferromagnetic-related secondary phase could be detected in ZnO:Cu.
Original language | English |
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Article number | 086101 |
Journal | Journal of Applied Physics |
Volume | 99 |
Issue number | 8 |
DOIs | |
Publication status | Published - 25 May 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy