Copper-doped ZnO (ZnO:Cu) films were prepared on silicon substrates by filtered cathodic vacuum arc technique at room temperature using a Zn target containing 5 at. % of Cu. Room temperature ferromagnetism was observed in the ZnO:Cu films with saturation magnetization of 0.037 μB Cu atom. The origin of the ferromagnetism in ZnO:Cu was mainly due to Cu ions substituted into the ZnO lattice. X-ray diffraction, x-ray photoelectron spectroscopy, and transmission electron microscopy revealed that no ferromagnetic-related secondary phase could be detected in ZnO:Cu.
|Journal||Journal of Applied Physics|
|Publication status||Published - 25 May 2006|
ASJC Scopus subject areas
- Physics and Astronomy(all)