Orientation selective growth of MgO films on Si (100) by pulsed laser deposition

X. Y. Chen, K. H. Wong, Chee Leung Mak, J. M. Liu, X. B. Yin, M. Wang, Z. G. Liu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

12 Citations (Scopus)

Abstract

Selective growth of single-oriented (110), (100) and (111) MgO films on Si(100) substrates without buffer layers was obtained via a two-step method by pulsed laser deposition. It was found that the orientation of the films was determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition, the laser fluence and the etching of the Si substrates have no apparent effect on the orientation of the films, but affect their crystalline quality. Under the present deposition conditions, the surfaces of all three different single-oriented films were very smooth and devoid of any particulates.
Original languageEnglish
Pages (from-to)703-706
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume74
Issue number5
DOIs
Publication statusPublished - 1 May 2002

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this