Orientation selective growth of MgO films on Si (100) by pulsed laser deposition

X. Y. Chen; K. H. Wong; Chee Leung Mak; J. M. Liu; X. B. Yin; M. Wang; Z. G. Liu

doi:10.1007/s003390100940

Orientation selective growth of MgO films on Si (100) by pulsed laser deposition

X. Y. Chen, K. H. Wong, Chee Leung Mak, J. M. Liu, X. B. Yin, M. Wang, Z. G. Liu

Research output: Journal article publication › Journal article › Academic research › peer-review

13 Citations (Scopus)

Abstract

Selective growth of single-oriented (110), (100) and (111) MgO films on Si(100) substrates without buffer layers was obtained via a two-step method by pulsed laser deposition. It was found that the orientation of the films was determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition, the laser fluence and the etching of the Si substrates have no apparent effect on the orientation of the films, but affect their crystalline quality. Under the present deposition conditions, the surfaces of all three different single-oriented films were very smooth and devoid of any particulates.

Original language	English
Pages (from-to)	703-706
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	74
Issue number	5
DOIs	https://doi.org/10.1007/s003390100940
Publication status	Published - 1 May 2002

ASJC Scopus subject areas

General Chemistry
General Materials Science

More information

10.1007/s003390100940

Cite this

@article{8d93ce9ddc124743a01564f30584fcb3,

title = "Orientation selective growth of MgO films on Si (100) by pulsed laser deposition",

abstract = "Selective growth of single-oriented (110), (100) and (111) MgO films on Si(100) substrates without buffer layers was obtained via a two-step method by pulsed laser deposition. It was found that the orientation of the films was determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition, the laser fluence and the etching of the Si substrates have no apparent effect on the orientation of the films, but affect their crystalline quality. Under the present deposition conditions, the surfaces of all three different single-oriented films were very smooth and devoid of any particulates.",

author = "Chen, {X. Y.} and Wong, {K. H.} and Mak, {Chee Leung} and Liu, {J. M.} and Yin, {X. B.} and M. Wang and Liu, {Z. G.}",

year = "2002",

month = may,

day = "1",

doi = "10.1007/s003390100940",

language = "English",

volume = "74",

pages = "703--706",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Federal Informational-Analytical Center of the Defense Industry",

number = "5",

}

TY - JOUR

T1 - Orientation selective growth of MgO films on Si (100) by pulsed laser deposition

AU - Chen, X. Y.

AU - Wong, K. H.

AU - Mak, Chee Leung

AU - Liu, J. M.

AU - Yin, X. B.

AU - Wang, M.

AU - Liu, Z. G.

PY - 2002/5/1

Y1 - 2002/5/1

N2 - Selective growth of single-oriented (110), (100) and (111) MgO films on Si(100) substrates without buffer layers was obtained via a two-step method by pulsed laser deposition. It was found that the orientation of the films was determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition, the laser fluence and the etching of the Si substrates have no apparent effect on the orientation of the films, but affect their crystalline quality. Under the present deposition conditions, the surfaces of all three different single-oriented films were very smooth and devoid of any particulates.

AB - Selective growth of single-oriented (110), (100) and (111) MgO films on Si(100) substrates without buffer layers was obtained via a two-step method by pulsed laser deposition. It was found that the orientation of the films was determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition, the laser fluence and the etching of the Si substrates have no apparent effect on the orientation of the films, but affect their crystalline quality. Under the present deposition conditions, the surfaces of all three different single-oriented films were very smooth and devoid of any particulates.

UR - http://www.scopus.com/inward/record.url?scp=0036568594&partnerID=8YFLogxK

U2 - 10.1007/s003390100940

DO - 10.1007/s003390100940

M3 - Journal article

SN - 0947-8396

VL - 74

SP - 703

EP - 706

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 5

ER -

Orientation selective growth of MgO films on Si (100) by pulsed laser deposition

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this