Orientation controllable deposition of LiNbO3 films on sapphire and diamond substrates for surface acoustic wave device application

H. K. Lam; Jiyan Dai; H. L W Chan

doi:10.1016/j.jcrysgro.2004.04.111

Orientation controllable deposition of LiNbO3 films on sapphire and diamond substrates for surface acoustic wave device application

H. K. Lam, Jiyan Dai, H. L W Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

31 Citations (Scopus)

Abstract

Lithium niobate (LiNbO3) epitaxial films were deposited on (0001) and (112̄0) sapphire and diamond substrates by pulsed laser deposition. Different orientations of LiNbO3films on sapphire and diamond substrates have been achieved by controlling the deposition conditions such as oxygen pressures. It was found that lower oxygen pressure (100mTorr) favors a-oriented LiNbO3film growth while higher oxygen pressure (500mTorr) favors c-oriented growth. A two step film growth process (growth at 500mTorr oxygen pressure for 15s followed by 12min growth at 100mTorr oxygen pressure at 650°C) was developed to deposit surface-flat c-oriented LiNbO3films on sapphire and aluminum oxide buffered polycrystalline diamond substrates. Surface acoustic wave devices were fabricated and characterized utilizing the structure of LiNbO3/Al2O3/diamond.

Original language	English
Pages (from-to)	144-148
Number of pages	5
Journal	Journal of Crystal Growth
Volume	268
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.04.111
Publication status	Published - 15 Jul 2004

Keywords

B1. Diamond
B1. Lithium niobate
B1. Sapphire
B3. Surface acoustic wave device

ASJC Scopus subject areas

Condensed Matter Physics

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10.1016/j.jcrysgro.2004.04.111

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title = "Orientation controllable deposition of LiNbO3 films on sapphire and diamond substrates for surface acoustic wave device application",

abstract = "Lithium niobate (LiNbO3) epitaxial films were deposited on (0001) and (11{\=2}0) sapphire and diamond substrates by pulsed laser deposition. Different orientations of LiNbO3films on sapphire and diamond substrates have been achieved by controlling the deposition conditions such as oxygen pressures. It was found that lower oxygen pressure (100mTorr) favors a-oriented LiNbO3film growth while higher oxygen pressure (500mTorr) favors c-oriented growth. A two step film growth process (growth at 500mTorr oxygen pressure for 15s followed by 12min growth at 100mTorr oxygen pressure at 650°C) was developed to deposit surface-flat c-oriented LiNbO3films on sapphire and aluminum oxide buffered polycrystalline diamond substrates. Surface acoustic wave devices were fabricated and characterized utilizing the structure of LiNbO3/Al2O3/diamond.",

keywords = "B1. Diamond, B1. Lithium niobate, B1. Sapphire, B3. Surface acoustic wave device",

author = "Lam, {H. K.} and Jiyan Dai and Chan, {H. L W}",

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T1 - Orientation controllable deposition of LiNbO3 films on sapphire and diamond substrates for surface acoustic wave device application

AU - Lam, H. K.

AU - Dai, Jiyan

AU - Chan, H. L W

PY - 2004/7/15

Y1 - 2004/7/15

N2 - Lithium niobate (LiNbO3) epitaxial films were deposited on (0001) and (112̄0) sapphire and diamond substrates by pulsed laser deposition. Different orientations of LiNbO3films on sapphire and diamond substrates have been achieved by controlling the deposition conditions such as oxygen pressures. It was found that lower oxygen pressure (100mTorr) favors a-oriented LiNbO3film growth while higher oxygen pressure (500mTorr) favors c-oriented growth. A two step film growth process (growth at 500mTorr oxygen pressure for 15s followed by 12min growth at 100mTorr oxygen pressure at 650°C) was developed to deposit surface-flat c-oriented LiNbO3films on sapphire and aluminum oxide buffered polycrystalline diamond substrates. Surface acoustic wave devices were fabricated and characterized utilizing the structure of LiNbO3/Al2O3/diamond.

AB - Lithium niobate (LiNbO3) epitaxial films were deposited on (0001) and (112̄0) sapphire and diamond substrates by pulsed laser deposition. Different orientations of LiNbO3films on sapphire and diamond substrates have been achieved by controlling the deposition conditions such as oxygen pressures. It was found that lower oxygen pressure (100mTorr) favors a-oriented LiNbO3film growth while higher oxygen pressure (500mTorr) favors c-oriented growth. A two step film growth process (growth at 500mTorr oxygen pressure for 15s followed by 12min growth at 100mTorr oxygen pressure at 650°C) was developed to deposit surface-flat c-oriented LiNbO3films on sapphire and aluminum oxide buffered polycrystalline diamond substrates. Surface acoustic wave devices were fabricated and characterized utilizing the structure of LiNbO3/Al2O3/diamond.

KW - B1. Diamond

KW - B1. Lithium niobate

KW - B1. Sapphire

KW - B3. Surface acoustic wave device

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U2 - 10.1016/j.jcrysgro.2004.04.111

DO - 10.1016/j.jcrysgro.2004.04.111

M3 - Journal article

SN - 0022-0248

VL - 268

SP - 144

EP - 148

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Orientation controllable deposition of LiNbO3 films on sapphire and diamond substrates for surface acoustic wave device application

Abstract

Keywords

ASJC Scopus subject areas

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