Orientation controllable deposition of LiNbO3 films on sapphire and diamond substrates for surface acoustic wave device application

H. K. Lam, Jiyan Dai, H. L W Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

24 Citations (Scopus)

Abstract

Lithium niobate (LiNbO3) epitaxial films were deposited on (0001) and (112̄0) sapphire and diamond substrates by pulsed laser deposition. Different orientations of LiNbO3films on sapphire and diamond substrates have been achieved by controlling the deposition conditions such as oxygen pressures. It was found that lower oxygen pressure (100mTorr) favors a-oriented LiNbO3film growth while higher oxygen pressure (500mTorr) favors c-oriented growth. A two step film growth process (growth at 500mTorr oxygen pressure for 15s followed by 12min growth at 100mTorr oxygen pressure at 650°C) was developed to deposit surface-flat c-oriented LiNbO3films on sapphire and aluminum oxide buffered polycrystalline diamond substrates. Surface acoustic wave devices were fabricated and characterized utilizing the structure of LiNbO3/Al2O3/diamond.
Original languageEnglish
Pages (from-to)144-148
Number of pages5
JournalJournal of Crystal Growth
Volume268
Issue number1-2
DOIs
Publication statusPublished - 15 Jul 2004

Keywords

  • B1. Diamond
  • B1. Lithium niobate
  • B1. Sapphire
  • B3. Surface acoustic wave device

ASJC Scopus subject areas

  • Condensed Matter Physics

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