Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Hei Man Yau, Xinxin Chen, Chi Man Wong, Deyang Chen, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)


Binary ferroelectric materials such as hafnium oxide have been intensively studied, which are expected to exhibit robust ferroelectricity comparable to the perovskite-based ferroelectrics at nanoscale. Here, using the combination of X-ray diffraction (XRD) associate with Transmission Electron Microscope (TEM), we reveal the epitaxial growth of Al-doped HfO2 possessing various phase structures on different oriented SrTiO3 substrates. The well-oriented films show different ferroelectricity indicated by piezoresponse force microscopy (PFM). The film grown on the (111) SrTiO3 substrate shows the largest electromechanical effect. These results, with the analyses of structural characterizations, demonstrate the orientation control of phase transitions and ferroelectricity in Al-doped HfO2 thin films.

Original languageEnglish
Article number111114
JournalMaterials Characterization
Publication statusPublished - Jun 2021


  • Ferroelectric
  • Hafnium oxide
  • Phase transition
  • Thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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