Optimizing Al-doped ZrO₂ as the gate dielectric for MoS₂ field-effect transistors

Engineering

• Gate Dielectric 100%
• MoS2 83%
• Field-Effect Transistor 50%
• Transistor 33%
• Scattering 33%
• Oxygen Vacancy 16%
• Carrier Mobility 16%
• Dielectric Film 16%
• Screening Effect 16%
• Optical Phonon 16%
• Device Performance 16%
• Control Sample 16%
• Current Ratio 16%
• Applications 16%
• Demonstrates 16%
• Surfaces 16%

Physics

• Field Effect Transistor 50%
• Permittivity 33%
• Scattering 33%
• Dielectrics 16%
• Carrier Mobility 16%
• Threshold Voltage 16%
• Impurities 16%
• Electrical Properties 16%
• Utilization 16%
• Value 16%
• Adjusting 16%
• Mobility 16%

Material Science

• Surface 33%
• Dielectric Material 16%
• Impurity 16%
• Carrier Mobility 16%
• Devices 16%
• Electrical Property 16%
• Dielectric Films 16%