Optical properties of rare-earth doped epitaxial Sr0.5Ba0.5Nb2O6thin films grown by pulsed laser deposition

Y. B. Yao, W. C. Liu, Chee Leung Mak, K. H. Wong, H. L. Tam, K. W. Cheah

Research output: Journal article publicationJournal articleAcademic researchpeer-review

11 Citations (Scopus)

Abstract

Optical quality rare-earth (RE) (Nd3+, Eu3+, Gd3+and Yb3+) doped Sr0.5Ba0.5Nb2O6(SBN) epitaxial films of ∼ 170 nm thick have been successfully grown on MgO (100) single crystal substrates using pulsed laser deposition technique. Strong residual stress in these films has been revealed by Raman spectroscopic studies. Two kinds of in-plane orientations with respect to the MgO substrate co-exist. All the film samples show high transparency in the visible wavelength. Their band-gap energies appear to be independent of the types of dopant. Photoluminescence (PL) spectra of RE-doped SBN ceramics show a strong and broad emission band at around 600 nm (2.07 eV). The peak position of this emission band changes slightly with different RE-dopants. Thin film samples, however, yield a broad PL band at around 385 nm (3.22 eV). This UV emission shows no observable shift in the peak position for different dopants. Apart from these broad emission bands, conspicuous emission lines from Eu3+and Nd3+ions are also noted. The origins of these PL spectra are discussed.
Original languageEnglish
Pages (from-to)52-57
Number of pages6
JournalThin Solid Films
Volume519
Issue number1
DOIs
Publication statusPublished - 29 Oct 2010

Keywords

  • Epitaxial film
  • Photoluminescence
  • Raman spectroscopy
  • Rare-earth doping
  • Strontium Barium Niobiate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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