Optical and transport properties of defective non-crystalline solids

Chung Wo Ong; M. P. Tsang

doi:10.1007/s00339-002-1921-7

Optical and transport properties of defective non-crystalline solids

Chung Wo Ong, M. P. Tsang

Research output: Journal article publication › Journal article › Academic research › peer-review

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Abstract

A method is proposed to analyze the optical absorption and electrical conductivity of non-crystalline materials having a high concentration of localized mid-gap states. The method is applied to dual ion beam deposited silicon nitride films containing various N contents. In this method, the optical absorption spectrum is fitted by using hypothetical functions of the density of states (DOS). The contribution from electron transitions between localized states is taken into account. The DOS at the Fermi level (Ef) was found to be very high (1019-1020eV-1cm-3), so that hopping of charge carriers around Efdominates the transport properties. Combined with the data of electrical conductivity, the hopping distance and the spread of the electron wave function of the charge carriers at Efare calculated. Furthermore, the temperature dependence of the mobility of the charge carriers at Efis also deduced.

Original language	English
Pages (from-to)	947-952
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	77
Issue number	7
DOIs	https://doi.org/10.1007/s00339-002-1921-7
Publication status	Published - 27 Oct 2003

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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10.1007/s00339-002-1921-7

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title = "Optical and transport properties of defective non-crystalline solids",

abstract = "A method is proposed to analyze the optical absorption and electrical conductivity of non-crystalline materials having a high concentration of localized mid-gap states. The method is applied to dual ion beam deposited silicon nitride films containing various N contents. In this method, the optical absorption spectrum is fitted by using hypothetical functions of the density of states (DOS). The contribution from electron transitions between localized states is taken into account. The DOS at the Fermi level (Ef) was found to be very high (1019-1020eV-1cm-3), so that hopping of charge carriers around Efdominates the transport properties. Combined with the data of electrical conductivity, the hopping distance and the spread of the electron wave function of the charge carriers at Efare calculated. Furthermore, the temperature dependence of the mobility of the charge carriers at Efis also deduced.",

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N2 - A method is proposed to analyze the optical absorption and electrical conductivity of non-crystalline materials having a high concentration of localized mid-gap states. The method is applied to dual ion beam deposited silicon nitride films containing various N contents. In this method, the optical absorption spectrum is fitted by using hypothetical functions of the density of states (DOS). The contribution from electron transitions between localized states is taken into account. The DOS at the Fermi level (Ef) was found to be very high (1019-1020eV-1cm-3), so that hopping of charge carriers around Efdominates the transport properties. Combined with the data of electrical conductivity, the hopping distance and the spread of the electron wave function of the charge carriers at Efare calculated. Furthermore, the temperature dependence of the mobility of the charge carriers at Efis also deduced.

AB - A method is proposed to analyze the optical absorption and electrical conductivity of non-crystalline materials having a high concentration of localized mid-gap states. The method is applied to dual ion beam deposited silicon nitride films containing various N contents. In this method, the optical absorption spectrum is fitted by using hypothetical functions of the density of states (DOS). The contribution from electron transitions between localized states is taken into account. The DOS at the Fermi level (Ef) was found to be very high (1019-1020eV-1cm-3), so that hopping of charge carriers around Efdominates the transport properties. Combined with the data of electrical conductivity, the hopping distance and the spread of the electron wave function of the charge carriers at Efare calculated. Furthermore, the temperature dependence of the mobility of the charge carriers at Efis also deduced.

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JO - Applied Physics

JF - Applied Physics

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Optical and transport properties of defective non-crystalline solids

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