Optical and transport properties of defective non-crystalline solids

Chung Wo Ong, M. P. Tsang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)


A method is proposed to analyze the optical absorption and electrical conductivity of non-crystalline materials having a high concentration of localized mid-gap states. The method is applied to dual ion beam deposited silicon nitride films containing various N contents. In this method, the optical absorption spectrum is fitted by using hypothetical functions of the density of states (DOS). The contribution from electron transitions between localized states is taken into account. The DOS at the Fermi level (Ef) was found to be very high (1019-1020eV-1cm-3), so that hopping of charge carriers around Efdominates the transport properties. Combined with the data of electrical conductivity, the hopping distance and the spread of the electron wave function of the charge carriers at Efare calculated. Furthermore, the temperature dependence of the mobility of the charge carriers at Efis also deduced.
Original languageEnglish
Pages (from-to)947-952
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Issue number7
Publication statusPublished - 27 Oct 2003

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science


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