Optical absorption of a-B and a-B1-xSix films prepared by LPCVD method

Chung Wo Ong; K. P. Chik; H. K. Wong

doi:10.1016/S0022-3093(05)80271-6

Optical absorption of a-B and a-B1-xSix films prepared by LPCVD method

Chung Wo Ong, K. P. Chik, H. K. Wong

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

A series of a-B films with substrate temperature Tsranging from 300 to 800°C and two series of a-B1-xSixfilms (0.1≤x≤0.9) with Ts= 460 and 620°C were prepared by LPCVD method. Optical absorption spectra of these films from visible to near infrared region are measured in order to study the influence of Tsand the effect of Si incorporation into boron. Functions for density of states are constructed to fit the curves. When Tsincreases from 300°C to 800°C, the optical gap of a-B films decreases from1.2 to0.8eV, while the width of the tail states decreases. It is found that Si incorporation into boron introduces additional sub-gap states.

Original language	English
Pages (from-to)	923-926
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	137-138
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0022-3093(05)80271-6
Publication status	Published - 1 Jan 1991

ASJC Scopus subject areas

Ceramics and Composites
Electronic, Optical and Magnetic Materials

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10.1016/S0022-3093(05)80271-6

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title = "Optical absorption of a-B and a-B1-xSix films prepared by LPCVD method",

abstract = "A series of a-B films with substrate temperature Tsranging from 300 to 800°C and two series of a-B1-xSixfilms (0.1≤x≤0.9) with Ts= 460 and 620°C were prepared by LPCVD method. Optical absorption spectra of these films from visible to near infrared region are measured in order to study the influence of Tsand the effect of Si incorporation into boron. Functions for density of states are constructed to fit the curves. When Tsincreases from 300°C to 800°C, the optical gap of a-B films decreases from1.2 to0.8eV, while the width of the tail states decreases. It is found that Si incorporation into boron introduces additional sub-gap states.",

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AU - Ong, Chung Wo

AU - Chik, K. P.

AU - Wong, H. K.

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AB - A series of a-B films with substrate temperature Tsranging from 300 to 800°C and two series of a-B1-xSixfilms (0.1≤x≤0.9) with Ts= 460 and 620°C were prepared by LPCVD method. Optical absorption spectra of these films from visible to near infrared region are measured in order to study the influence of Tsand the effect of Si incorporation into boron. Functions for density of states are constructed to fit the curves. When Tsincreases from 300°C to 800°C, the optical gap of a-B films decreases from1.2 to0.8eV, while the width of the tail states decreases. It is found that Si incorporation into boron introduces additional sub-gap states.

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Optical absorption of a-B and a-B1-xSix films prepared by LPCVD method

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