One-stage erbium ASE source with 80 nm bandwidth and low ripples

W. C. Huang; Ping Kong Alexander Wai; Hwa Yaw Tam; X. Y. Dong; Hai Ming; J. P. Xie

doi:10.1049/el:20020689

One-stage erbium ASE source with 80 nm bandwidth and low ripples

W. C. Huang
, Ping Kong Alexander Wai
, Hwa Yaw Tam
, X. Y. Dong
, Hai Ming
, J. P. Xie

Research output: Journal article publication › Journal article › Academic research › peer-review

32 Citations (Scopus)

Abstract

A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.

Original language	English
Pages (from-to)	956-957
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	17
DOIs	https://doi.org/10.1049/el:20020689
Publication status	Published - 15 Aug 2002
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20020689

Cite this

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title = "One-stage erbium ASE source with 80 nm bandwidth and low ripples",

abstract = "A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.",

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AU - Huang, W. C.

AU - Wai, Ping Kong Alexander

AU - Tam, Hwa Yaw

AU - Dong, X. Y.

AU - Ming, Hai

AU - Xie, J. P.

PY - 2002/8/15

Y1 - 2002/8/15

N2 - A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.

AB - A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.

UR - https://www.scopus.com/pages/publications/0037102071

U2 - 10.1049/el:20020689

DO - 10.1049/el:20020689

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JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

One-stage erbium ASE source with 80 nm bandwidth and low ripples

Abstract

ASJC Scopus subject areas

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