One-stage erbium ASE source with 80 nm bandwidth and low ripples

W. C. Huang, Ping Kong Alexander Wai, Hwa Yaw Tam, X. Y. Dong, Hai Ming, J. P. Xie

Research output: Journal article publicationJournal articleAcademic researchpeer-review

31 Citations (Scopus)


A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.
Original languageEnglish
Pages (from-to)956-957
Number of pages2
JournalElectronics Letters
Issue number17
Publication statusPublished - 15 Aug 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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