One-stage erbium ASE source with 80 nm bandwidth and low ripples

W. C. Huang; Ping Kong Alexander Wai; Hwa Yaw Tam; X. Y. Dong; Hai Ming; J. P. Xie

doi:10.1049/el:20020689

One-stage erbium ASE source with 80 nm bandwidth and low ripples

W. C. Huang, Ping Kong Alexander Wai, Hwa Yaw Tam, X. Y. Dong, Hai Ming, J. P. Xie

Research output: Journal article publication › Journal article › Academic research › peer-review

31 Citations (Scopus)

Abstract

A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.

Original language	English
Pages (from-to)	956-957
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	17
DOIs	https://doi.org/10.1049/el:20020689
Publication status	Published - 15 Aug 2002
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20020689

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@article{9d7bab351cf34630bac2ffa6ec0f195b,

title = "One-stage erbium ASE source with 80 nm bandwidth and low ripples",

abstract = "A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.",

author = "Huang, {W. C.} and Wai, {Ping Kong Alexander} and Tam, {Hwa Yaw} and Dong, {X. Y.} and Hai Ming and Xie, {J. P.}",

year = "2002",

month = aug,

day = "15",

doi = "10.1049/el:20020689",

language = "English",

volume = "38",

pages = "956--957",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "17",

}

TY - JOUR

T1 - One-stage erbium ASE source with 80 nm bandwidth and low ripples

AU - Huang, W. C.

AU - Wai, Ping Kong Alexander

AU - Tam, Hwa Yaw

AU - Dong, X. Y.

AU - Ming, Hai

AU - Xie, J. P.

PY - 2002/8/15

Y1 - 2002/8/15

N2 - A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.

AB - A one-stage erbium ASE source that has an 80 nm flat bandwidth is demonstrated. The ASE source is realised in a 37 m erbium-doped fibre with a 1480 nm laser diode and a 980 nm laser diode as forward and backward pumps respectively. High output power up to 13.5 dBm is obtained with a total pump power of 95.7 mW.

UR - http://www.scopus.com/inward/record.url?scp=0037102071&partnerID=8YFLogxK

U2 - 10.1049/el:20020689

DO - 10.1049/el:20020689

M3 - Journal article

SN - 0013-5194

VL - 38

SP - 956

EP - 957

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

One-stage erbium ASE source with 80 nm bandwidth and low ripples

Abstract

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