On the power dissipation in dynamic threshold silicon-on-insulator CMOS inverter

Wei Jin; Philip Ching Ho Chan; Mansun Chan

On the power dissipation in dynamic threshold silicon-on-insulator CMOS inverter

Wei Jin, Philip Ching Ho Chan, Mansun Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

The leakage current due to the parasitic PN junction diodes in SOI DTMOS (Dynamic Threshold Voltage MOSFET) inverter is reported. The additional power dissipation in DTMOS inverter due to the diodes is quantified through an analytical model and verified by MEDICI simulation. Power dissipation between conventional SOI CMOS and SOI DTMOS inverters is compared.

Original language	English
Title of host publication	International Symposium on Low Power Electronics and Design, Digest of Technical Papers
Publisher	IEEE
Pages	247-250
Number of pages	4
Publication status	Published - 1 Jan 1997
Externally published	Yes
Event	Proceedings of the 1997 International Symposium on Low Power Electronics and Design - Monterey, CA, United States Duration: 18 Aug 1997 → 20 Aug 1997

Conference

Conference	Proceedings of the 1997 International Symposium on Low Power Electronics and Design
Country/Territory	United States
City	Monterey, CA
Period	18/08/97 → 20/08/97

ASJC Scopus subject areas

General Engineering

Cite this

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title = "On the power dissipation in dynamic threshold silicon-on-insulator CMOS inverter",

abstract = "The leakage current due to the parasitic PN junction diodes in SOI DTMOS (Dynamic Threshold Voltage MOSFET) inverter is reported. The additional power dissipation in DTMOS inverter due to the diodes is quantified through an analytical model and verified by MEDICI simulation. Power dissipation between conventional SOI CMOS and SOI DTMOS inverters is compared.",

author = "Wei Jin and Chan, {Philip Ching Ho} and Mansun Chan",

year = "1997",

month = jan,

day = "1",

language = "English",

pages = "247--250",

booktitle = "International Symposium on Low Power Electronics and Design, Digest of Technical Papers",

publisher = "IEEE",

address = "United States",

note = "Proceedings of the 1997 International Symposium on Low Power Electronics and Design ; Conference date: 18-08-1997 Through 20-08-1997",

}

On the power dissipation in dynamic threshold silicon-on-insulator CMOS inverter. / Jin, Wei; Chan, Philip Ching Ho; Chan, Mansun.
International Symposium on Low Power Electronics and Design, Digest of Technical Papers. IEEE, 1997. p. 247-250.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - On the power dissipation in dynamic threshold silicon-on-insulator CMOS inverter

AU - Jin, Wei

AU - Chan, Philip Ching Ho

AU - Chan, Mansun

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The leakage current due to the parasitic PN junction diodes in SOI DTMOS (Dynamic Threshold Voltage MOSFET) inverter is reported. The additional power dissipation in DTMOS inverter due to the diodes is quantified through an analytical model and verified by MEDICI simulation. Power dissipation between conventional SOI CMOS and SOI DTMOS inverters is compared.

AB - The leakage current due to the parasitic PN junction diodes in SOI DTMOS (Dynamic Threshold Voltage MOSFET) inverter is reported. The additional power dissipation in DTMOS inverter due to the diodes is quantified through an analytical model and verified by MEDICI simulation. Power dissipation between conventional SOI CMOS and SOI DTMOS inverters is compared.

UR - http://www.scopus.com/inward/record.url?scp=0030655578&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SP - 247

EP - 250

BT - International Symposium on Low Power Electronics and Design, Digest of Technical Papers

PB - IEEE

T2 - Proceedings of the 1997 International Symposium on Low Power Electronics and Design

Y2 - 18 August 1997 through 20 August 1997

ER -

On the power dissipation in dynamic threshold silicon-on-insulator CMOS inverter

Abstract

Conference

ASJC Scopus subject areas

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