On the deposition mechanism of a-C:H films by plasma enhanced chemical vapor deposition

Y. H. Cheng, Y. P. Wu, J. G. Chen, X. L. Qiao, C. S. Xie, B. K. Tay, Shu Ping Lau, X. Shi

Research output: Journal article publicationJournal articleAcademic researchpeer-review

36 Citations (Scopus)


Amorphous hydrogenated carbon (a-C:H) films were deposited from a mixture of C2H2and Ar, by a radio frequency direct current (r.f.-d.c.) plasma-enhanced chemical vapor deposition technique. The effect of process parameters on the deposition rate of the a-C:H films was systematically studied. It was found that the deposition rate increased initially and then decreased after passing a maximum with the increase of bias voltage and deposition pressure. The deposition rate increased gradually with increasing C2H2content. However, a-C:H films could not be prepared at C2H2contents lower than 10%. A simple phenomenological surface model, which takes into account the sputtering effect of a-C:H films by energetic Ar ion bombardment, is proposed on the basis of these results to describe the deposition mechanism of a-C:H films.
Original languageEnglish
Pages (from-to)27-33
Number of pages7
JournalSurface and Coatings Technology
Issue number1
Publication statusPublished - 1 Dec 2000
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


Dive into the research topics of 'On the deposition mechanism of a-C:H films by plasma enhanced chemical vapor deposition'. Together they form a unique fingerprint.

Cite this