On mechanism of nickel diffusion during metal induced lateral crystallization of amorphous silicon

A. M. Myasnikov, M. C. Poon, Philip Ching Ho Chan, K. L. Ng, M. S. Chan, W. Y. Chan, S. Singla, C. Y. Yuen

Research output: Journal article publicationConference articleAcademic researchpeer-review

4 Citations (Scopus)

Abstract

During metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality of obtained film depend on nickel penetration and it is very important to know about nickel diffusion at recrystallization process. The nickel has penetrated during annealing on surface of a-Si inducing the recrystallization process, which has changed the mechanism of diffusion on surface of a-Si to the mechanism of diffusion on surface of single crystal silicon and in single crystal silicon. Also the effect of thickness of nickel and a-Si film are discussed.
Original languageEnglish
Pages (from-to)229-232
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume715
Publication statusPublished - 1 Dec 2002
Externally publishedYes
EventAmorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States
Duration: 2 Apr 20025 Apr 2002

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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