On mechanism of nickel diffusion during metal induced lateral crystallization of amorphous silicon

A. M. Myasnikov; M. C. Poon; Philip Ching Ho Chan; K. L. Ng; M. S. Chan; W. Y. Chan; S. Singla; C. Y. Yuen

On mechanism of nickel diffusion during metal induced lateral crystallization of amorphous silicon

A. M. Myasnikov, M. C. Poon, Philip Ching Ho Chan, K. L. Ng, M. S. Chan, W. Y. Chan, S. Singla, C. Y. Yuen

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

During metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality of obtained film depend on nickel penetration and it is very important to know about nickel diffusion at recrystallization process. The nickel has penetrated during annealing on surface of a-Si inducing the recrystallization process, which has changed the mechanism of diffusion on surface of a-Si to the mechanism of diffusion on surface of single crystal silicon and in single crystal silicon. Also the effect of thickness of nickel and a-Si film are discussed.

Original language	English
Pages (from-to)	229-232
Number of pages	4
Journal	Materials Research Society Symposium - Proceedings
Volume	715
Publication status	Published - 1 Dec 2002
Externally published	Yes
Event	Amorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States Duration: 2 Apr 2002 → 5 Apr 2002

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{20fa332f3be049d58f29fbde0ab276dd,

title = "On mechanism of nickel diffusion during metal induced lateral crystallization of amorphous silicon",

abstract = "During metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality of obtained film depend on nickel penetration and it is very important to know about nickel diffusion at recrystallization process. The nickel has penetrated during annealing on surface of a-Si inducing the recrystallization process, which has changed the mechanism of diffusion on surface of a-Si to the mechanism of diffusion on surface of single crystal silicon and in single crystal silicon. Also the effect of thickness of nickel and a-Si film are discussed.",

author = "Myasnikov, {A. M.} and Poon, {M. C.} and Chan, {Philip Ching Ho} and Ng, {K. L.} and Chan, {M. S.} and Chan, {W. Y.} and S. Singla and Yuen, {C. Y.}",

year = "2002",

month = dec,

day = "1",

language = "English",

volume = "715",

pages = "229--232",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Amorphous and Heterogeneous Silicon Films 2002 ; Conference date: 02-04-2002 Through 05-04-2002",

}

TY - JOUR

T1 - On mechanism of nickel diffusion during metal induced lateral crystallization of amorphous silicon

AU - Myasnikov, A. M.

AU - Poon, M. C.

AU - Chan, Philip Ching Ho

AU - Ng, K. L.

AU - Chan, M. S.

AU - Chan, W. Y.

AU - Singla, S.

AU - Yuen, C. Y.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - During metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality of obtained film depend on nickel penetration and it is very important to know about nickel diffusion at recrystallization process. The nickel has penetrated during annealing on surface of a-Si inducing the recrystallization process, which has changed the mechanism of diffusion on surface of a-Si to the mechanism of diffusion on surface of single crystal silicon and in single crystal silicon. Also the effect of thickness of nickel and a-Si film are discussed.

AB - During metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality of obtained film depend on nickel penetration and it is very important to know about nickel diffusion at recrystallization process. The nickel has penetrated during annealing on surface of a-Si inducing the recrystallization process, which has changed the mechanism of diffusion on surface of a-Si to the mechanism of diffusion on surface of single crystal silicon and in single crystal silicon. Also the effect of thickness of nickel and a-Si film are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0036920093&partnerID=8YFLogxK

M3 - Conference article

SN - 0272-9172

VL - 715

SP - 229

EP - 232

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Amorphous and Heterogeneous Silicon Films 2002

Y2 - 2 April 2002 through 5 April 2002

ER -

On mechanism of nickel diffusion during metal induced lateral crystallization of amorphous silicon

Abstract

ASJC Scopus subject areas

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