Abstract
This paper reports a silicon-based micromachined optical power detector with on-chip measurement ability. The optical power is detected by an integrated electron-tunneling displacement transducer, in which optical force is employed as the bridge between optical energy and mechanical energy transition. Compared with the traditional optical power detectors, which are based on photo absorption, the proposed optical power detector has advantages of small size (0.08 mm × 0.3 mm), low thermal noise (0.03 V/°C), large measurement range (> 20 mW) and wavelength independence. Therefore, it has potential applications as high-speed detecting element in silicon-based photonic chips and lab-on-chip systems.
| Original language | English |
|---|---|
| Title of host publication | 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 |
| Pages | 1911-1914 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - Jun 2011 |
| Externally published | Yes |
| Event | 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China Duration: 5 Jun 2011 → 9 Jun 2011 |
Publication series
| Name | 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 |
|---|
Conference
| Conference | 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 |
|---|---|
| Country/Territory | China |
| City | Beijing |
| Period | 5/06/11 → 9/06/11 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- on-chip measurement
- Optical detection
- optical force
- tunneling sensor
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
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