On-chip optical power measurement by optical force

J. F. Tao, H. Cai, A. B. Yu, W. M. Zhu, Q. X. Zhang, J. Wu, K. Xu, J. T. Lin, G. Q. Lo, D. L. Kwong, A. Q. Liu

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

This paper reports a silicon-based micromachined optical power detector with on-chip measurement ability. The optical power is detected by an integrated electron-tunneling displacement transducer, in which optical force is employed as the bridge between optical energy and mechanical energy transition. Compared with the traditional optical power detectors, which are based on photo absorption, the proposed optical power detector has advantages of small size (0.08 mm × 0.3 mm), low thermal noise (0.03 V/°C), large measurement range (> 20 mW) and wavelength independence. Therefore, it has potential applications as high-speed detecting element in silicon-based photonic chips and lab-on-chip systems.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages1911-1914
Number of pages4
DOIs
Publication statusPublished - Jun 2011
Externally publishedYes
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: 5 Jun 20119 Jun 2011

Publication series

Name2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Country/TerritoryChina
CityBeijing
Period5/06/119/06/11

Keywords

  • on-chip measurement
  • Optical detection
  • optical force
  • tunneling sensor

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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