Observations of nitrogen-related photoluminescence bands from nitrogen-doped ZnO films

Y. G. Wang, Shu Ping Lau, X. H. Zhang, H. W. Lee, H. H. Hng, B. K. Tay

Research output: Journal article publicationJournal articleAcademic researchpeer-review

48 Citations (Scopus)

Abstract

We report the synthesis and photoluminescence (PL) properties of nitrogen-doped ZnO films. These films were synthesized by filtered cathodic vacuum arc technique; nitrogen gas was used as a dopant source. X-ray diffraction results indicated that the ZnO films were highly c-axis oriented. The appearance of the nitrogen-related local vibrational Raman scattering peaks showed that nitrogen was incorporated into the films. In the PL spectrum of the undoped films, a near band edge exciton emission peak at 384nm and a weak visible band related to oxygen interstitial at 660nm were observed. For nitrogen-doped films, besides the two emission bands observed in the undoped samples, two additional PL bands at around 450 and 890nm were detected. According to the first-principle total energy calculation, nitrogen-induced acceptor energy level is located at 0.4eV above the valence band maximum. Therefore the emission band at around 450nm may originate from the recombination of photo-generated electrons with neutral nitrogen acceptors, and the 890nm band is attributed to electron transition from oxygen interstitial to this neutral nitrogen acceptors.
Original languageEnglish
Pages (from-to)265-269
Number of pages5
JournalJournal of Crystal Growth
Volume252
Issue number1-3
DOIs
Publication statusPublished - 1 May 2003
Externally publishedYes

Keywords

  • A. Photoluminescence
  • A3. Filtered cathodic vacuum arc
  • A3. Physical vapor deposition
  • B1. Zinc compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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