Numerical analysis for systems with memory arising from semiconductor simulations

W. Allegretto; Yanping Lin; A. Zhou

doi:10.1016/S0096-3003(98)10081-4

Numerical analysis for systems with memory arising from semiconductor simulations

W. Allegretto
, Yanping Lin
, A. Zhou

Research output: Journal article publication › Journal article › Academic research › peer-review

2 Citations (Scopus)

Abstract

Simulation of Amorphous Silicon microelectronic devices gives rise to a system of coupled non-linear partial differential equations with memory terms. In this paper we discuss semidiscrete finite element approximation schemes employed for the numerical discretization of such systems. Existence, uniqueness and error analysis are presented.

Original language	English
Pages (from-to)	101-119
Number of pages	19
Journal	Applied Mathematics and Computation
Volume	105
Issue number	2-3
DOIs	https://doi.org/10.1016/S0096-3003(98)10081-4
Publication status	Published - 1 Jan 1999
Externally published	Yes

Keywords

Amorphous silicon
Drift-diffusion
Error estimates
Finite element

ASJC Scopus subject areas

Computational Mathematics
Applied Mathematics

More information

10.1016/S0096-3003(98)10081-4

Cite this

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title = "Numerical analysis for systems with memory arising from semiconductor simulations",

abstract = "Simulation of Amorphous Silicon microelectronic devices gives rise to a system of coupled non-linear partial differential equations with memory terms. In this paper we discuss semidiscrete finite element approximation schemes employed for the numerical discretization of such systems. Existence, uniqueness and error analysis are presented.",

keywords = "Amorphous silicon, Drift-diffusion, Error estimates, Finite element",

author = "W. Allegretto and Yanping Lin and A. Zhou",

year = "1999",

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doi = "10.1016/S0096-3003(98)10081-4",

language = "English",

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T1 - Numerical analysis for systems with memory arising from semiconductor simulations

AU - Allegretto, W.

AU - Lin, Yanping

AU - Zhou, A.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Simulation of Amorphous Silicon microelectronic devices gives rise to a system of coupled non-linear partial differential equations with memory terms. In this paper we discuss semidiscrete finite element approximation schemes employed for the numerical discretization of such systems. Existence, uniqueness and error analysis are presented.

AB - Simulation of Amorphous Silicon microelectronic devices gives rise to a system of coupled non-linear partial differential equations with memory terms. In this paper we discuss semidiscrete finite element approximation schemes employed for the numerical discretization of such systems. Existence, uniqueness and error analysis are presented.

KW - Amorphous silicon

KW - Drift-diffusion

KW - Error estimates

KW - Finite element

UR - https://www.scopus.com/pages/publications/0141470839

U2 - 10.1016/S0096-3003(98)10081-4

DO - 10.1016/S0096-3003(98)10081-4

M3 - Journal article

SN - 0096-3003

VL - 105

SP - 101

EP - 119

JO - Applied Mathematics and Computation

JF - Applied Mathematics and Computation

IS - 2-3

ER -

Numerical analysis for systems with memory arising from semiconductor simulations

Abstract

Keywords

ASJC Scopus subject areas

More information

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