N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor with HfTiON Gate Dielectric

  • Yong Huang
  • , Jing Ping Xu
  • , Lu Liu
  • , Pui To Lai
  • , Wing Man Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

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