N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor with HfTiON Gate Dielectric

Yong Huang, Jing Ping Xu, Lu Liu, Pui To Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)

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