N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor with HfTiON Gate Dielectric

Yong Huang, Jing Ping Xu, Lu Liu, Pui To Lai, Wing Man Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

4 Citations (Scopus)

Fingerprint

Dive into the research topics of 'N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor with HfTiON Gate Dielectric'. Together they form a unique fingerprint.

Engineering

Computer Science

Physics

Biochemistry, Genetics and Molecular Biology

Material Science