N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor with HfTiON Gate Dielectric

Yong Huang, Jing Ping Xu, Lu Liu, Pui To Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)


The interfacial and electrical properties of sputtered Ti-incorporated Hf oxynitride on Ga2O3(Gd2O3) (GGO) with or without N2-plasma treated as an interfacial passivation layer (IPL) for Ge MOS capacitor are compared. It is found that low interface-state density (3.4 × 1011cm-2eV-1), small gate leakage current (2.93 × 10-5A/cm2at Vg= Vfb+ 1 V), small capacitance equivalent thickness (1.09 nm), and large equivalent dielectric constant (26.5) can be achieved for the sample with N2-plasma-treated GGO IPL. The involved mechanisms lie in the fact that the N2-plasma-treated GGO IPL can effectively block the interdiffusion of elements and suppress the formation of GeOxinterfacial layer.
Original languageEnglish
Article number7476871
Pages (from-to)2838-2843
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 1 Jul 2016


  • Ga O (Gd O ) (GGO) interlayer 2 3 2 3
  • Ge MOS
  • interface-state density
  • stacked gate-dielectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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